Results 251 to 260 of about 85,686 (325)

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching. [PDF]

ACS Omega
Nam J, Jeong J, Lee S, Kim Y, Jeon W.
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Organic Phototransistor Photonic Synapses for Artificial Vision. [PDF]

Nanomicro Lett
Ding F, Xue D, Chi L, Huang L.
europepmc   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

Advanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt   +2 more
wiley   +1 more source

Defect-Driven Neuromorphic Plasticity in Planar ZnO Optoelectronic Synapses. [PDF]

ACS Appl Mater Interfaces
Ren Z, Wang S, Meng B, Liu H, An Q, Su L, Chen R.   +6 more
europepmc   +1 more source

Grain size engineering via a Hf_0.5Zr_0.5O₂ seed layer for FeFET memory and synaptic devices

Junhyeok Park, Chulwon Chung, Bon‐Cheol Ku, Seunghyeon Yun, Kyungsoo Park, Changhwan Choi   +5 more
openalex   +2 more sources

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
wiley   +1 more source

Artificial Neuron Based on Electrical Anisotropy from WSe₂ Field Effect Transistors. [PDF]

Adv Sci (Weinh)
Sun Q, Chen P, Lv K, Chen C, Zhu J, Chen Z, Lu Y, Zhang N, Tan Z, Lin T, Pan C.   +10 more
europepmc   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

Advanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter   +12 more
wiley   +1 more source