Results 261 to 270 of about 95,522 (318)

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Gate insulator stack engineering for fully CMOS-compatible reservoir computing. [PDF]

Nano Converg
Hwang J, Park MK, Kim J, Bae JH, Lee JH.
europepmc   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Artificial Neuron Based on Electrical Anisotropy from WSe₂ Field Effect Transistors. [PDF]

Adv Sci (Weinh)
Sun Q, Chen P, Lv K, Chen C, Zhu J, Chen Z, Lu Y, Zhang N, Tan Z, Lin T, Pan C.   +10 more
europepmc   +1 more source

Behavioural and physical model of synaptic devices

Report on behavioural and physical model of synaptic devices.
openaire   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Synaptic Plasticity Engineering for Neural Precision, Temporal Learning, and Scalable Neuromorphic Systems. [PDF]

Nanomicro Lett
Liu Z, Fang Y, Liu Q, Tian B, Zhao C.
europepmc   +1 more source

Ultrafast visual perception beyond human capabilities enabled by motion analysis using synaptic transistors. [PDF]

Nat Commun
Wang S, Zhao J, Pu T, Zhao L, Guo X, Cheng Y, Li C, Ma W, Tang C, Xu Z, Wang N, Occhipinti LG, Nathan A, Dahiya R, Wu H, Tao L, Gao S.   +16 more
europepmc   +1 more source

Brain-inspired synaptic transistors for in-situ spiking reinforcement learning with eligibility trace. [PDF]

Nat Commun
Wang Y, Xiong W, Yan J, Zhou Y, Zhu C, Miao X, He Y, Chai Y.   +7 more
europepmc   +1 more source