Results 51 to 60 of about 1,883,087 (288)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Regulation of synaptic connectivity: levels of fasciclin II influence synaptic growth in the Drosophila CNS [PDF]

, 2002
Much of our understanding of synaptogenesis comes from studies that deal with the development of the neuromuscular junction (NMJ). Although well studied, it is not clear how far the NMJ represents an adequate model for the formation of synapses within ...
Baines, Richard A.; id_orcid, Baines, Richard A., Salvaterra, Paul M., Thompson, Annemarie, Bate, Michael, Seugnet, Laurent   +5 more
core  

Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation

Advanced Science, 2020
Although the energy consumption of reported neuromorphic computing devices inspired by biological systems has become lower than traditional memory, it still remains greater than bio‐synapses (≈10 fJ per spike). Herein, a flexible MoS2‐based heterosynapse
Tian‐Yu Wang, Jia‐Lin Meng, Zhen‐Yu He, Lin Chen, Hao Zhu, Qing‐Qing Sun, Shi‐Jin Ding, Peng Zhou, David Wei Zhang   +8 more
doaj   +1 more source

Biological UV Photoreceptors‐Inspired Sn‐Doped Polycrystalline β‐Ga2O3 Optoelectronic Synaptic Phototransistor for Neuromorphic Computing

Advanced Electronic Materials, 2023
In this study, the authors fabricate Sn‐doped 100‐nm thick polycrystalline β‐Ga2O3 synaptic field‐effect transistors (FETs) emulating optical and electrical spike stimulation.
Youngbin Yoon, Youngki Kim, Wan Sik Hwang, Myunghun Shin   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Postnatal development of intrinsic and synaptic properties transforms signaling in the Layer 5 excitatory neural network of the visual cortex [PDF]

, 2011
Information flow in neocortical circuits is regulated by two key parameters: intrinsic neuronal properties and the short-term activity-dependent plasticity of synaptic transmission.
Etherington, Sarah J., S. J. Etherington, S. R. Williams, Etherington, S.J., Williams, S.R., Williams, Stephen R.   +5 more
core   +1 more source

Current Pulses to Control the Conductance in RRAM Devices

IEEE Journal of the Electron Devices Society, 2020
Due to the high number of reachable conductance levels in resistive switching devices, they are good candidates to implement artificial synaptic devices.
Hector Garcia, Salvador Duenas, Oscar G. Ossorio, Helena Castan   +3 more
doaj   +1 more source

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate

Advanced Electronic Materials, 2023
Photodetectors sensing the short‐wave infrared (SWIR) region have great potential due to their significant advantages in a variety of applications because SWIR light possesses both characteristics of visible light and infrared light.
Tae Soo Kim, Sung‐Han Jeon, Kyeol Ko, Dae‐Hwan Ahn, Jae‐Hoon Han, Won Jun Choi, Ki Jun Yu   +6 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

Advanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee, Byung Ik Park, Gihyeon Yim, Hyunjae Yoo, Sangjun Ma, Jundong Park, Jeong‐Yun Sun   +6 more
wiley   +1 more source