Results 91 to 100 of about 13,955 (266)

CoSP: Reconfigurable Metamaterial Inverse Design via Contrastive Pretrained Large Language Model

Advanced Science, EarlyView.
In this work, CoSP (contrastive multi‐state pretrain), an intelligent inverse design method for reconfigurable metamaterials based on a contrastive pretrained large language model, is proposed. Numerical experiments demonstrate that CoSP can design reconfigurable metamaterial structures for multi‐state, multi‐band optical responses, showing great ...
Shujie Yang, Yuqi Zhang, Xuzhe Zhao, Yansong Tang, Kaichen Dong   +4 more
wiley   +1 more source

Incentive mechanism of foundation model enabled cross-silo federated learning

Scientific Reports
The integration of foundation models (FMs) into cross-silo federated learning (FL) introduces transformative capabilities but also exacerbates strategic client behaviors, such as knowledge hoarding and free-riding, which degrade global model performance ...
Ning Zhang, Xiaoqing Xu, Xiaojun Liu, Juan Wu, Hong Tang   +4 more
doaj   +1 more source

Non‐Uniform Space‐Time‐Coding Modulation for Low‐Complexity Diagnostics of Reconfigurable Intelligent Surfaces

Advanced Electronic Materials, EarlyView.
A diagnostic method for reconfigurable intelligent surfaces (RIS) based on non‐uniform space‐time‐coding modulation is presented. Fault localization is achieved via amplitude‐only spectral measurements, eliminating the need for complex signal processing. A one‐to‐one mapping between harmonic components and RIS elements enables accurate detection.
Xiao Qing Chen, Lei Zhang, Yi Ning Zheng, Bing Bing Zhu, Marco Rossi, Giuseppe Castaldi, Shuo Liu, Vincenzo Galdi, Tie Jun Cui   +8 more
wiley   +1 more source

Conformal Reconfigurable Intelligent Surfaces: A Cylindrical Geometry Perspective

Advanced Electronic Materials, EarlyView.
Cylindrical reconfigurable intelligent surfaces are explored for low‐complexity beam steering using one‐bit meta‐atoms. A multi‐level modeling approach, including optimization‐based synthesis, demonstrates that even minimal hardware can support directive scattering.
Filippo Pepe, Ivan Iudice, Giuseppe Castaldi, Marco Di Renzo, Vincenzo Galdi   +4 more
wiley   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
wiley   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Bootstrapping in approximate fully homomorphic encryption: a research survey

Cybersecurity
Fully homomorphic encryption (FHE) has emerged as a prominent area of cryptographic research in recent years, offering the capability to perform computations on ciphertext without compromising data privacy.
Huajie Shen, Qian Xu, Bo Yu, Yuhan Yang, Wei He   +4 more
doaj   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Machine Learning‐Assisted Design and Performance Prediction of a Compact Dual‐Band Polarization‐Insensitive THz Metamaterial Absorber for Skin‐Cancer‐Related Refractive‐Index Sensing

Advanced Electronic Materials, EarlyView.
A compact QASRR‐based THz metamaterial absorber enables polarization‐insensitive dual‐band absorption and skin‐cancer‐related refractive‐index sensing through measurable resonance shifts. Field, surface‐current, and circuit analyses clarify the dual‐resonance mechanism, while StackNet‐assisted prediction accurately estimates the simulated absorption ...
Md. Murad Kabir Nipun, S. M. Rifatur Rana, Md. Golam Morshed, Imrose Jahan, F. A. Sabbir Ahamed, Md. Jahedul Islam   +5 more
wiley   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

Advanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo, Taichi Murakami, Loick Pichon, Joël Leblanc‐Lavoie, Takashi Teranishi, Akira Kishimoto, Tomoaki Yamada, My Ali El Khakani   +7 more
wiley   +1 more source