Results 161 to 170 of about 54,432 (308)
Formation of the IR photodetecting structures based on silicon hyperdoped with tellurium
Ф. Ф. Комаров +7 more
openalex +2 more sources
Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey +12 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
High‐Gain Ag2Te/MoS2 Hybrid Photodetectors for Short‐Wave Infrared Imaging
A precision‐engineered short‐wave infrared image sensor based on a 0D/2D Ag2Te/MoS2 hybrid structure is demonstrated in this work. The device exploits photodoping at the nanoscale interface to achieve broadband detection from visible to infrared wavelengths with high responsivity and fast response.
Seock‐Jin Jeong +15 more
wiley +1 more source
Tellurium-bridged two-leg spin ladder in
G. Narsinga Rao +7 more
openalex +1 more source
This work demonstrates a reconfigurable near‐perfect absorber based on a Metal– Sb2S3–Metal trilayer structure for applications across the visible and near‐infrared spectrum. The experimentally demonstrated design combines spectral selectivity, polarization sensitivity, angle‐independence, and structural simplicity, validating Sb2S3 as a next ...
Israel Alves Oliveira +5 more
wiley +1 more source
Layer‐Dependent Antiferromagnetic Chern and Axion Insulating States in UOTe
Layer‐dependent topological phases are identified in the van der Waals antiferromagnet UOTe. Ab initio calculations reveal bilayer UOTe as a rare example of high‐temperature antiferromagnetic Chern insulator with quantized Hall conductivity and near‐zero net magnetization, while odd‐layer films exhibit axion‐insulator‐like behavior with quantized spin ...
Sougata Mardanya +10 more
wiley +1 more source

