Results 171 to 180 of about 54,432 (308)

Interplay between Structural, Electronic, and Topological Properties in Low-Dimensional Tellurium. [PDF]

ACS Omega
Araújo GEG, da Rosa AL.
europepmc   +1 more source

The phase diagram for the binary system indium-tellurium and electrical properties of In3Te5

, 1964
E. GROCHOWSKI, Donald R. Mason, Gerald A. Schmitt, Phillip H. Smith   +3 more
openalex   +2 more sources

¹²⁵Te Fourier transform nuclear magnetic resonance studies of tellurium compounds [PDF]

, 1982
Raj K. Chadha, Jack M. Miller
openalex   +1 more source

Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor

Advanced Science, Volume 13, Issue 21, 13 April 2026.
Dry‐transferred Bi2Te3 layers enable a planar quantum topological memristor framework. In‐plane topological surface states facilitate ultrafast & low‐power operations. Coexisting analog and digital modes support current‐controlled multilevel states. PQTM exhibits 105 s retention, 103 cycles endurance, and reproducibility across 24 devices.
Mamoon Ur Rashid, Usman Safder, Sobia Ali Khan, Anh‐Tuan Pham, Muhammad Sheeraz, Nguyen‐Hoang Dang, Duy Le Thanh, Zeeshan Tahir, Faisal Maqbool, Koo‐Hyun Chung, Sunglae Cho, Jungdae Kim, Yong Soo Kim   +12 more
wiley   +1 more source

Structural Design of Bismuth Telluride Nanoplates through Process Variables. [PDF]

Chem Mater
Ackley J, Briggs AE, Chinnathambi K, McKibben N, Francis C, Eixenberger J, Valayil Varghese T, Estrada D.   +7 more
europepmc   +1 more source

Analysis of Strain and Defects in Tellurium-WSe₂ Moiré Heterostructures Using Scanning Nanodiffraction

, 2023
Bengisu Sari, Steven E. Zeltmann, Chunsong Zhao, Philipp Pelz, Ali Javey, Andrew M. Minor, Colin Ophus, Mary Scott   +7 more
openalex   +1 more source

Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors

Advanced Science, Volume 13, Issue 22, 17 April 2026.
Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li, Renjie Hu, Xiangping Zhao, Xi Wang, Wei Qin   +4 more
wiley   +1 more source

Author Correction: A porous tellurium interlayer for high-power and long-cycling garnet-based quasi-solid-state lithium-metal batteries. [PDF]

Nat Commun
Kim JS, Yoon G, Kim YS, Kim TH, Kim S, Kim J, Lee J, Kim R, Lee MJ, Yashiro N, Suzuki S, Asano T, Badding M, Song Z, Heo S.   +14 more
europepmc   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, Volume 13, Issue 21, 13 April 2026.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Determination of Selenium and Tellurium in Coal by Graphite Furnace Atomic Absorption Spectrometry after Coprecipitation with Arsenic

, 1987
In Hwa Woo, Kiyotaka Watanabe, Yoshikazu Hashimoto, Yong Keun Lee   +3 more
openalex   +2 more sources