Results 141 to 150 of about 179,343 (322)

Large‐Aperture Polarization‐Independent Broadband Achromatic All‐Dielectric Metalens for Terahertz Focusing

open access: yesAdvanced Science, EarlyView.
A large‐aperture, high focusing efficiency and polarization‐independent THz single‐layer achromatic metalens is reported via discrete multi‐wavelength achromatic design and global optimization algorithm. The fabricated metalens exhibits a largest diameter of 2.21 cm, excellent achromatic performance, extremely high average focusing efficiency (> 46 ...
Xiaoqiang Jiang   +6 more
wiley   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

A Universal Attenuation Model of Terahertz Wave in Space-Air-Ground Channel Medium

open access: yesIEEE Open Journal of the Communications Society
Providing continuous bandwidth over several tens of GHz, the Terahertz (THz) band (0.1-10 THz) supports space-air-ground integrated network (SAGIN) in 6G and beyond wireless networks.
Zhirong Yang, Weijun Gao, Chong Han
doaj   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero   +6 more
wiley   +1 more source

Influence of metal–semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs)

open access: yesScientific Reports
The effects of absorber structure–controlled by adjusting the thickness ratio of doped and undoped InGaAs layers–and metal-semiconductor interface treatment methods were investigated in waveguide-type UTC-PDs. Ultraviolet-ozone (UVO) and ammonia solution
Soo Cheol Kang   +3 more
doaj   +1 more source

Ultrafast x-ray diffraction of a ferroelectric soft mode driven by broadband terahertz pulses [PDF]

open access: green, 2016
S. Grübel   +16 more
openalex   +1 more source

A General and Efficient Framework for the Rapid Design of Miniaturized, Wideband, and High‐Bit RIS

open access: yesAdvanced Electronic Materials, EarlyView.
A general and efficient framework is proposed for the rapid design of high‐performance reconfigurable intelligent surfaces (RISs). This framework integrates advanced antenna design techniques and incorporates various load types, quantities, and values to achieve the design of high‐performance RISs.
Jun Wei Zhang   +14 more
wiley   +1 more source

Ultrahigh Power Factor of Sputtered Nanocrystalline N‐Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives

open access: yesAdvanced Science
Magnetron‐sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their
Tingrui Gong   +8 more
doaj   +1 more source

High-Field Nonlinear Terahertz Conductivities of Iron Ultrathin Films

open access: yesNanomaterials
The electronic transport behavior in ferromagnetic thin films critically dictates the functionality and efficiency of devices in spintronics and modern materials science.
Lewen Zhu   +6 more
doaj   +1 more source

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