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Terahertz Quantum Cascade Lasers

SPIE Proceedings, 2003
Unipolar semiconductor injection lasers emitting at THz frequencies (from 4.3 THz down to 2.8 THz) are discussed. The devices are based on interminiband transitions in chirped GaAs/AlGaAs superlattices that are arranged in a quantum-cascade scheme. The core, featuring about 100 repetitions of this type of superlattice, is embedded into a novel kind of ...
R. Köhler   +6 more
  +9 more sources

Terahertz Quantum Cascade Lasers

Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, 2007
Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or more of continuous-wave coherent radiation throughout the terahertz range — the spectral regime between millimetre and infrared wavelengths, which has long resisted development.
Benjamin S. Williams   +7 more
openaire   +2 more sources

Terahertz semiconductor-heterostructure lasers

Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002
Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz)
KOEHLER R.   +8 more
openaire   +4 more sources

Terahertz heterostructure lasers

MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003., 2005
Unipolar semiconductor injection lasers emitting at THz frequencies have been demonstrated. The devices, based on the quantum-cascade scheme in GaAs/AlGaAs superlattices, operate in continuous-wave up to 50 K (70 K pulsed) with output powers of several mW.
A. Tredicucci   +6 more
openaire   +1 more source

Terahertz silicon lasers

2008 IEEE 21st International Semiconductor Laser Conference, 2008
Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K).
Pavlov, Sergey   +6 more
openaire   +2 more sources

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