Results 231 to 240 of about 222,334 (272)

Ternary metal nitrides by the urea route

Materials Research Bulletin, 2007
Abstract Interstitial molybdenum ternary nitrides, M n Mo 3 N (M = Fe and Co, n  = 3; M = Ni, n  = 2), can be obtained by heating the molybdate precursors, FeMoO 4 , CoMoO 4 and NiMoO 4 with urea in the 1:12 molar ratio in the 900–1000 °C range. Fe 3 Mo 3 N and Co 3 Mo 3 N are obtained in pure form.
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Recent developments in ternary nitride chemistry

1996
Recent developments in the synthesis, structures, and properties of ionic/covalent ternary nitrides are reviewed. A description, including synthetic conditions, is given of preparative methods reported in the literature. Solid state synthetic reactions from binary nitrides as well as novel synthetic approaches such as amide synthesis and ammonolysis of
H.-C. zur Loye, J. D. Houmes, D. S. Bem
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Epitaxy of ternary nitrides on GaN single crystals

Journal of Crystal Growth, 1999
Abstract InxGa1−xN and AlxGa1−xN layers were grown by metalorganic chemical vapour deposition (MOCVD) on highly conductive single crystals of GaN. The samples were then examined using X-ray diffraction and photoluminescence. It was found that there is a substantial difference in properties between the layers grown on the N-face (00.{ 1 ...
P Prystawko, M Leszczyński, A Śliwiński, H Teisseyre, T Suski, M Boćkowski, S Porowski, J Domagała, C Kirchner, A Pelzmann, M Schauler, M Kamp   +11 more
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Phonons in ternary group-III nitride alloys

Physical Review B, 2000
The lattice dynamics of random ${A}_{x}{B}_{1\ensuremath{-}x}\mathrm{N}$ alloys $(A,B=\mathrm{A}\mathrm{l},\mathrm{}\mathrm{G}\mathrm{a},\mathrm{}\mathrm{In})$ is studied with a method based on the modified random-element isodisplacement (MREI) and a rigid-ion model.
H. Grille, Ch. Schnittler, F. Bechstedt
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Complex ordering in ternary wurtzite nitride alloys

Journal of Physics and Chemistry of Solids, 2003
Abstract Atomic ordering in AlGaN films produced by plasma assisted molecular beam epitaxy (PA-MBE) was investigated with X-ray diffraction (XRD) and transmission electron microscopy selected area diffraction (TEM-SAD). Under nitrogen-rich growth conditions, films undergo 1×1 monolayer cation ordering along the [0001] growth direction.
E. Iliopoulos, K.F. Ludwig, T.D. Moustakas   +2 more
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Statistical model of ternary group-III nitrides

Physical Review B, 2004
We have derived a statistical model of zinc-blende ternary group-III nitrides, assuming the crystal lattice distortion due to lattice constant mismatch to make the major contribution to the free energy of mixing of these compounds and using a new methodology based on the numerical calculation of the configuration partition functions of the alloys. As a
Sergey Yu. Karpov, Natalya I. Podolskaya, Igor A. Zhmakin, Alexander I. Zhmakin   +3 more
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Plasmonic spectral tunability of conductive ternary nitrides

Applied Physics Letters, 2016
Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as TixTa1−xN, TixZr1−xN, TixAl1−xN, and ZrxTa1−xN share the important plasmonic features with their binary counterparts, while having the additional ...
Kassavetis, S., Bellas, D., Abadias, Grégory, Lidorikis, E., Patsalas, P.   +4 more
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Quantitative Model for the MBE-Growth of Ternary Nitrides

physica status solidi (a), 1999
We report on a study of the growth of ternary AlGaN and InGaN by molecular beam epitaxy, leading to a quantitative model describing the alloy composition and growth rate as a function of group III fluxes, N flux and growth temperature. For low growth temperatures, the composition is exclusively determined by the different bond strengths between the ...
R. Averbeck, H. Riechert
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Optical Properties of III-Nitride Ternary Compounds

physica status solidi (b), 2001
As a basic step in the evaluation of optical properties of the III-nitrides, the dielectric function of AlGaN and InGaN has been computed using the information from the full-band electronic structure in the framework of the random phase approximation.
A. BALDANZI, E. BELLOTTI, GOANO, MICHELE
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Synthesis of transition metal nitrides and silicon based ternary nitrides [PDF]

, 2011
Solution phase ammonolysis and sol-gel techniques that produce polymeric metal-amide precursors are of growing interest in the synthesis of nitride materials, which result from the thermal decomposition of the polymer. They can be used to control composition and to produce a large number of useful morphologies such as nanoparticles, films, monoliths ...
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