Results 251 to 260 of about 5,561 (296)

AlGaN-based ternary nitride memristors

Applied Physics A, 2021
Resistive switching memory or memristors have been extensively studied worldwide, driven by perspective applications in nonvolatile memory, processing-in-memory, and neuromorphic computing hardware. Binary oxides are the most prevalent memristive materials; however, non-oxide materials can also exhibit resistive switching.
Seok Choi, Ha Young Lee, Hee Ju Yun, Byung Joon Choi   +3 more
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Infrared Plasmonics with Conductive Ternary Nitrides

ACS Applied Materials & Interfaces, 2017
Conductive transition metal nitrides are emerging as promising alternative plasmonic materials that are refractory and CMOS-compatible. In this work, we show that ternary transition metal nitrides of the B1 structure and consisting of a combination of group-IVb transition metal, such as Ti or Zr, and group III (Sc, Y, Al) or group II (Mg, Ca) elements ...
C. Metaxa, S. Kassavetis, J.F. Pierson, D. Gall, P. Patsalas   +4 more
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Deposition and characterization of ternary nitrides

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1988
Hard coatings of titanium nitride, titanium carbide, and aluminum oxide are the materials most widely used for improved performance and productivity on high-speed steel and cemented carbide tools. However, very little effort has been focused on the deposition of ternary nitrides.
H. Randhawa, P. C. Johnson, R. Cunningham   +2 more
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The chemistry of ternary and higher lithium nitrides

Coordination Chemistry Reviews, 2013
Lithium, as the lightest metallic element, forms a wide range of compounds of increasing importance as functional materials. This is especially true in an energy storage and conversion context, for example, where high energy density and high lithium ion mobility provide the drivers behind technologies such as rechargeable batteries and hydrogen storage.
Tapia-Ruiz, Nuria, Segales, Marc, H. Gregory, Duncan   +2 more
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Ferromagnetic frustration in ternary nitride ZnFe₃N

Physical Chemistry Chemical Physics, 2020
As a new antiperovskite nitride, ZnFe3N was synthesized and characterized by almost completely substituting iron atoms at corner positions of γ′-Fe4N.
W. Wang, X. C. Kan, X. S. Liu, Z. T. Zhang, K. M. U. Rehman, C. C. Liu, M. Shezad   +6 more
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Preparation and properties of the ternary nitride ZrNF

Solid State Communications, 2004
Abstract A single crystal of ZrNF has been successfully prepared by the high-temperature and high-pressure method. The crystals had the plate-like habit and was colorless and transparent. Unlike the layer structured β-ZrNX (X=Cl, Br, I) crystals prepared by the same method, which consist of ZrN double layers sandwiched between close-packed halogen ...
Liping Zhu, Xuean Chen, Shoji Yamanaka
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Microwave Synthesis of Ternary Nitride Materials

Journal of Solid State Chemistry, 1997
Abstract The utility of microwave heating and microwave generated nitrogen plasmas as a synthetic technique toward the synthesis of nitrides is demonstrated. The synthesis of several binary and ternary nitrides, including TiN, AlN, VN, Li 3 FeN 2 , Li 5 TiN 3 , and Li 3 AlN 2 , using either a microwave heating source or a microwave generated nitrogen
Joel D. Houmes, Hans-Conrad zur Loye
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Ternary Nitrides, Phosphides, and Arsenides of Lithium

Angewandte Chemie International Edition in English, 1968
AbstractTernary phases have been prepared from lithium, another metal, and nitrogen, phosphorus, or arsenic. The ternary compounds, in particular the nitrides, are thermally more stable than the binary compounds. The lithium gives rise to a relatively high polar bonding component.
R. Juza, K. Langer, K. Von Benda
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Ternary metal nitrides by the urea route

Materials Research Bulletin, 2007
Abstract Interstitial molybdenum ternary nitrides, M n Mo 3 N (M = Fe and Co, n  = 3; M = Ni, n  = 2), can be obtained by heating the molybdate precursors, FeMoO 4 , CoMoO 4 and NiMoO 4 with urea in the 1:12 molar ratio in the 900–1000 °C range. Fe 3 Mo 3 N and Co 3 Mo 3 N are obtained in pure form.
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Epitaxy of ternary nitrides on GaN single crystals

Journal of Crystal Growth, 1999
Abstract InxGa1−xN and AlxGa1−xN layers were grown by metalorganic chemical vapour deposition (MOCVD) on highly conductive single crystals of GaN. The samples were then examined using X-ray diffraction and photoluminescence. It was found that there is a substantial difference in properties between the layers grown on the N-face (00.{ 1 ...
P Prystawko, M Leszczyński, A Śliwiński, H Teisseyre, T Suski, M Boćkowski, S Porowski, J Domagała, C Kirchner, A Pelzmann, M Schauler, M Kamp   +11 more
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