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Recent developments in ternary nitride chemistry
1996Recent developments in the synthesis, structures, and properties of ionic/covalent ternary nitrides are reviewed. A description, including synthetic conditions, is given of preparative methods reported in the literature. Solid state synthetic reactions from binary nitrides as well as novel synthetic approaches such as amide synthesis and ammonolysis of
H.-C. zur Loye, J. D. Houmes, D. S. Bem
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Plasmonic spectral tunability of conductive ternary nitrides
Applied Physics Letters, 2016Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as TixTa1−xN, TixZr1−xN, TixAl1−xN, and ZrxTa1−xN share the important plasmonic features with their binary counterparts, while having the additional ...
Kassavetis, S. +4 more
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Complex ordering in ternary wurtzite nitride alloys
Journal of Physics and Chemistry of Solids, 2003Abstract Atomic ordering in AlGaN films produced by plasma assisted molecular beam epitaxy (PA-MBE) was investigated with X-ray diffraction (XRD) and transmission electron microscopy selected area diffraction (TEM-SAD). Under nitrogen-rich growth conditions, films undergo 1×1 monolayer cation ordering along the [0001] growth direction.
E. Iliopoulos +2 more
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Statistical model of ternary group-III nitrides
Physical Review B, 2004We have derived a statistical model of zinc-blende ternary group-III nitrides, assuming the crystal lattice distortion due to lattice constant mismatch to make the major contribution to the free energy of mixing of these compounds and using a new methodology based on the numerical calculation of the configuration partition functions of the alloys. As a
Sergey Yu. Karpov +3 more
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Phonons in ternary group-III nitride alloys
Physical Review B, 2000The lattice dynamics of random ${A}_{x}{B}_{1\ensuremath{-}x}\mathrm{N}$ alloys $(A,B=\mathrm{A}\mathrm{l},\mathrm{}\mathrm{G}\mathrm{a},\mathrm{}\mathrm{In})$ is studied with a method based on the modified random-element isodisplacement (MREI) and a rigid-ion model.
H. Grille, Ch. Schnittler, F. Bechstedt
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Synthesis of transition metal nitrides and silicon based ternary nitrides [PDF]
Solution phase ammonolysis and sol-gel techniques that produce polymeric metal-amide precursors are of growing interest in the synthesis of nitride materials, which result from the thermal decomposition of the polymer. They can be used to control composition and to produce a large number of useful morphologies such as nanoparticles, films, monoliths ...
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Optical Properties of III-Nitride Ternary Compounds
physica status solidi (b), 2001As a basic step in the evaluation of optical properties of the III-nitrides, the dielectric function of AlGaN and InGaN has been computed using the information from the full-band electronic structure in the framework of the random phase approximation.
A. BALDANZI, E. BELLOTTI, GOANO, MICHELE
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Materials science of ternary metal boron nitrides
International Journal of Inorganic Materials, 2001The present article intends to cover a brief review on the state of art of the materials science of ternary metal boron nitrides, comprising the stability of binary boron nitride BN, the formation of ternary compounds, their crystal structure(s) and the phase relations in ternary systems M-B-N.
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Ternary Nitride Synthesis: Ammonolysis of Ternary Oxide Precursors
Materials Science Forum, 1994D.S. Bem, J.D. Houmes, H.-C. zur Loye
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Ternary Nitride Materials: Fundamentals and Emerging Device Applications
Annual Review of Materials Research, 2021Ann L Greenaway +2 more
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