Results 241 to 250 of about 64,447 (308)

Atomized Oxidative Polymerization as a 3D Printing Platform for Binder‐Free, Bulk Conductive Polymer Architectures

open access: yesAdvanced Functional Materials, EarlyView.
Co‐delivery of electrosprayed EDOT and oxidant enables bulk oxidative polymerization during layer‐by‐layer fabrication, creating stable, highly conductive 3D PEDOT structures. This Atomized Oxidative Polymerization (AOP) overcomes the surface deposition‐only and matrix‐limited conductivity of conventional Vapor Phase Polymerization (VPP) and PEDOT:PSS ...
Tazdik Patwary Plateau   +2 more
wiley   +1 more source

Interlayer Expansion of Bulk MoS2 via Top‐Down Organic Pillaring Enables Tunable Li+ Intercalation and Controlled Solvent Co‐Intercalation

open access: yesAdvanced Functional Materials, EarlyView.
Top‐down organic pillaring expands the interlayer spacing of bulk‐sized MoS2 particles while preserving the bulk morphology. Operando X‐ray diffraction and electrochemical dilatometry show that MoS2‐bulk undergoes solvent co‐intercalation in diglyme electrolyte, causing large structural expansion, while pillared, expanded MoS2 suppresses solvent uptake
Jaehoon Choi   +8 more
wiley   +1 more source

Steering Oxygen Activation Pathways via Redox Dual‐Defects in 2D Hydrated WO3 for High‐Yield Singlet Oxygen Evolution

open access: yesAdvanced Functional Materials, EarlyView.
Redox dual‐defects (Cs substitution and O vacancies) in 2D hydrated WO3 steer O2 activation toward selective singlet oxygen evolution. WO‐CO achieves 8.6–15.8 times higher 1O2 production than single‐defect or pristine catalysts, enabling efficient pollutant mineralization via a pathway‐selective photocatalytic mechanism.
Sheng‐Qi Guo   +8 more
wiley   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

open access: yesAdvanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici   +8 more
wiley   +1 more source

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