Results 151 to 160 of about 323,013 (267)
We apply a foundational machine‐learning interatomic potential based on the graph atomic cluster expansion (GRACE) to simulate the commercial Ni‐based single‐crystal superalloy CMSX‐4. Hybrid Monte‐Carlo/molecular dynamics sampling resolves short‐range order in the γ phase and L12 sublattice occupancies in the γ’ phase and connects them to stacking ...
Aditya Vishwakarma +4 more
wiley +1 more source
Measurement of interfacial thermal resistance in high-energy-density matter. [PDF]
Allen CH +15 more
europepmc +1 more source
In situ Thermoreflectance Characterization of Thermal Resistance in Multilayer Electronics Packaging. [PDF]
Poopakdee N +3 more
europepmc +1 more source
Controlling the Field Assisted Sintering Technology (FAST) parameters, dwell temperature and cooling rate, significantly influences the microstructural evolution in titanium aluminide GE4822. Significant γ‐lamellar colonies develop only upon cooling through the α‐transus.
Jack Krohn, James Pepper, Martin Jackson
wiley +1 more source
Assessment of Thermal Resistance of Hot Water in Pasteurization. [PDF]
Alhusni HA, Ramamurthy T, Krishnan S.
europepmc +1 more source
Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity. [PDF]
Chakraborty S +12 more
europepmc +1 more source
Postbuild annealing systematically modifies the phase fractions and morphology of EB‐PBF processed Mo–9Si–8B. Quantitative microstructure–property correlations reveal how controlled phase evolution enhances high‐temperature compressive strength and creep resistance.
Christopher Schmidt +5 more
wiley +1 more source
Chain and End Group Effects of Self-Assembled Monolayers of Tripodal Molecules on Solid-Liquid Interfacial Thermal Resistance. [PDF]
Imaizumi T +8 more
europepmc +1 more source
The thermal resistance and targeting release of zein-sodium alginate binary complexes as a vehicle for the oral delivery of riboflavin. [PDF]
Ge X +7 more
europepmc +1 more source
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source

