Results 191 to 200 of about 39,352 (292)

Mechanically Adaptive Polyimide Interfaces for Stable High‐Voltage NCM–Sulfide All‐Solid‐State Batteries

open access: yesAdvanced Science, EarlyView.
A mechanically adaptive polyimide interface dynamically stabilizes single‐crystal cathodes in sulfide all‐solid‐state batteries. By integrating robust chemical coordination with viscoelastic compliance, this smart coating suppresses parasitic reactions and accommodates cyclic volume expansion.
Jiatao Wu   +8 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light

open access: yesAdvanced Electronic Materials, EarlyView.
A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto an amphiphilic axle was incorporated into droplet interface bilayers (DIBs). Photoswitching between the azobenzene configurations on the ring resulted in cycling between memristive and memcapacitive behaviors in lipid bilayers, enabling programmable ...
P.T. Podar   +4 more
wiley   +1 more source

Critical Perspectives on the Design of Polymeric Materials for Mitigating Thermal Runaway in Lithium-Ion Batteries. [PDF]

open access: yesPolymers (Basel)
Zhou H   +11 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics

open access: yesAdvanced Electronic Materials, EarlyView.
Disordered p‐type SnO thin‐films are deposited via atomic layer deposition using a novel heteroleptic precursor. These films enable low‐temperature fabrication of thin‐film transistors with excellent stability and mobility. Their potential compatibility with flexible substrates and integration with n‐type IGZO transistors makes them candidates for ...
Benjamin J. Peek   +15 more
wiley   +1 more source

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