Results 161 to 170 of about 122,323 (240)

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne   +17 more
wiley   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane   +9 more
wiley   +1 more source

Complexation‐Mediated Diffusion‐Limited Crystal Growth: A General Framework for Anisotropic Crystal Growth in Cu‐Based Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee   +5 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

DFT analysis of structural, electronic, optical, and thermodynamic properties of LiXI<sub>3</sub> (where X = Ca, Sr, Ba) halide perovskites for optoelectronics. [PDF]

open access: yesSci Rep
Tarekuzzaman M   +9 more
europepmc   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy