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Simulation of Digital Circuits based on Amorphous Indium Gallium Oxide Thin Film Transistors.
, 2010 Shridevi Lothey
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Electronics and Power, 1969
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
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In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
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Chemical Society Reviews, 2010
Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Advanced Materials, 2009
AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
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AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
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Solvent-gated thin-film-transistors
Physical Chemistry Chemical Physics, 2017TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.
Kyriaki Manoli +6 more
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An adaptive thin film transistor
1966 International Electron Devices Meeting, 1966A thin film transistor (TFT) is described and demonstrated whose transfer characteristic can be reversibly adapted by a short duration voltage pulse applied to a high impedance gate electrode. The device is a four terminal-two gate structure: A source, drain, and insulator gate contact form the basic TFT while the amount of polarity of the polarization
S.S. Perlman, K.H. Ludewig
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Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor
Japanese Journal of Applied Physics, 1995We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film
Kwangsoo Choi +1 more
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Microelectronics Reliability, 2002
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Golo-Tosic, N. +2 more
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It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Golo-Tosic, N. +2 more
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