Results 31 to 40 of about 86,415 (337)
Sensors, 2012 This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor.
Yong Suk Yang +4 more
doaj +1 more source
Photoresist-free printing of amorphous silicon thin-film transistors [PDF]
, 2003 Conventional fabrication of amorphous silicon thin-film transistors (a-Si TFTs) requires patterning numerous photoresist layers, a subtractive process that is time consuming and expensive.
Miller, Scott M. +2 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2015 A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj +1 more source
ChemistryOpen, 2021 In this paper, we described the design, synthesis, and characterization of two novel naphthalene diimide (NDI) core‐based targets modified with terminal fullerene (C60) yield – so called S4 and S5, in which NDI bearing 1 and 2 molecules of C60 ...
Shailesh S. Birajdar +8 more
doaj +1 more source
Synthesis and characterization of copper, polyimide and TIPS-pentacene layers for the development of a solution processed fibrous transistor [PDF]
, 2011 A study was performed for the development of a flexible organic field effect transistor starting from a polyester fibre as substrate material. Focus of subsequent layer deposition was on low temperature soluble processes to allow upscaling.
Bruneel, Els +5 more
core +3 more sources
A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
IEEE Journal of the Electron Devices Society, 2017 A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was
Yuxing Li +11 more
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MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
IEEE Journal of the Electron Devices Society, 2021 We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu +5 more
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Thin-film ZnO charge-trapping memory cell grown in a single ALD step [PDF]
, 2012 Cataloged from PDF version of article.A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the
Cimen, F. +5 more
core +1 more source
Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Turning an organic semiconductor into a low-resistance material by ion implantation
Science and Technology of Advanced Materials, 2015 We report on the effects of low energy ion implantation on thin films of pentacene, carried out to investigate the efficacy of this process in the fabrication of organic electronic devices.
Beatrice Fraboni +6 more
doaj +1 more source