Results 61 to 70 of about 2,167,008 (285)
Advanced Functional Materials, EarlyView.This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
Field-effect experiments on oxide superconductors thin films [PDF]
, 2006 [ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core +1 more source
Processing organic semiconductors [PDF]
, 2010 PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core +4 more sources
Advanced Functional Materials, EarlyView.Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Calculation of thin‑film Schottky‑gate transistors based on amorphous semiconductors
Технологія та конструювання в електронній апаратурі, 2003 A mathematical model of a thin‑film transistor with a Schottky gate based on amorphous semiconductor layers is proposed. Using the presented model, the main parameters and characteristics of a transistor based on an organic phthalocyanine film were ...
A. K. Mamedov
doaj
Materials Research Express, 2020 The present work reports the fabrication and characterization of high mobility thin-film transistors, where zinc nitride is used as the active layer (∼100 nm thick). For the TFT, the active layer was deposited at room temperature on different substrates (
Sachin Surve +2 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors [PDF]
, 2016 We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide (ZIZO) TFT.
Takamura, Yuzuru +3 more
core +1 more source