Results 71 to 80 of about 87,352 (336)

Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

APL Materials, 2016
We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA) self-assembled monolayer.
Taekyung Lim, Jonghun Lee, Sanghyun Ju
doaj   +1 more source

Inkjet Printed Electrodes in Thin Film Transistors

IEEE Journal of the Electron Devices Society, 2018
Inkjet printing is a non-vacuum, non-contact, low-cost, and direct patterning thin film deposition technique. Compared to traditional processes, it demands less materials and energy, simplifies processing steps and is compatible with the fast fabrication
Ruiqiang Tao, Honglong Ning, Jianqiu Chen, Jianhua Zou, Zhiqiang Fang, Caigui Yang, Yicong Zhou, Jianhua Zhang, Rihui Yao, Junbiao Peng   +9 more
doaj   +1 more source

Thermopower measurements on pentacene transistors [PDF]

, 2006
We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment.
Bussac, Marie-Noelle, Errien, Nicolas, Schaer, Michel, von Muehlenen, Adrian, Zuppiroli, Libero   +4 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Defect healing at room temperature in pentacene thin films and improved transistor performance

, 2007
We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors.
A. Roth, Bertram Batlogg, E. A. Silinsh, Fabian Meier, Kurt Mattenberger, M. Grünewald, Wolfgang L. Kalb   +6 more
core   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications

Journal of Microwaves, Optoelectronics and Electromagnetic Applications
This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin ...
Siham Belkacemi, Zoubeida Hafdi
doaj   +1 more source

Development of GaAs and GaAs sub /1-x/ P sub x thin-film bipolar transistors Final report [PDF]

Fabrication and electrical properties of GaAs type thin film bipolar ...
Dean, R. H., Dismukes, J. P., Nuese, C. J.   +2 more
core   +1 more source

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

, 2010
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and ...
Ikuhara, Yuichi, Kato, Takeharu, Koide, Hirotaka, Koumoto, Kunihito, Nagao, Yuki, Ohta, Hiromichi, Takasaki, Yuka, Umemura, Tomonari   +7 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source