Results 91 to 100 of about 2,167,008 (285)
Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long +26 more
wiley +1 more source
Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products.
Mallory Mativenga +2 more
doaj +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
A Current Supply with Single Organic Thin-Film Transistor for Charging Supercapacitors
We present a current supply, comprising a single organic thin-film transistor (OTFT), for the charging of supercapacitors. The current supply takes power from the electric grid (115 V AC, US standard), converts the AC voltage to a quasi-constant DC ...
Larsen, C., +9 more
core +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng +6 more
doaj +1 more source
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu +14 more
wiley +1 more source
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani +10 more
wiley +1 more source
Measurement and modelling of low-frequency noise in polysilicon thin-film source-gated transistors
The thin-film source-gated transistor (SGT) structure (cross-section schematic in Fig. 1(a)) features many advantages for analog applications, such as low saturation voltage and output conductance, thanks to the overlap between the gate and the Schottky ...
International Thin-film Transistor Conference +1 more
core
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source

