Results 91 to 100 of about 21,510 (298)
The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley +1 more source
Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products.
Mallory Mativenga +2 more
doaj +1 more source
Silicon for thin-film transistors
We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation.
Wagner, Sigurd +3 more
openaire +4 more sources
with a single grain boundary (GB) present in the channel, is simu-lated using two–dimensional numerical simulation, which includes a model of deep trap states at GBs.
Mizuta, Hiroshi +9 more
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Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani +10 more
wiley +1 more source
A thin-film transistor with polytetrafluoroethylene as insulator
The fabrication and performance characteristics of a new kind of thin-film transistor is presented. The novelty consists of the use of a thin polymer film as an insulator between gate and semiconductor film.
B. Hindryckx +3 more
core +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng +6 more
doaj +1 more source
Nanocrystalline Silicon Thin Film Transistors
Abstract not Available.
openaire +1 more source
Field-effect experiments on oxide superconductors thin films
[ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core

