Results 111 to 120 of about 2,167,008 (285)

CVD Grown Hybrid MoSe2–WSe2 Lateral/Vertical Heterostructures With Strong Interlayer Exciton Emission

Advanced Materials, EarlyView.
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain, Sai Shradha, Axel Printschler, Julian Picker, Luc F. Oswald, Julian Führer, Nicole Engel, Honey Jayeshkumar Shah, Christof Neumann, Daria I. Markina, Moritz Quincke, Johannes Biskupek, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin   +16 more
wiley   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy. [PDF]

Micromachines (Basel), 2023
Pan W, Zhang G, Liu X, Song K, Ning L, Li S, Chen L, Zhang X, Huang T, Yang H, Zhou X, Zhang S, Lu L.   +12 more
europepmc   +1 more source

Thin film transistor

, 1999
A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain.
Sin, Johnny K.O., Kottarath Parambil, Anish Kumar   +1 more
core  

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Research Progress of Vertical Channel Thin Film Transistor Device. [PDF]

Sensors (Basel), 2023
Sun B, Huang H, Wen P, Xu M, Peng C, Chen L, Li X, Zhang J.   +7 more
europepmc   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Integrated Water-Level Sensor Using Thin-Film Transistor Technology. [PDF]

ACS Omega, 2023
Moon SJ, Han YL, Hwang SH, Kang SJ, Lee JM, Bae BS.   +5 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source