Results 111 to 120 of about 21,510 (298)
An electronic device including a thin film transistor [PDF]
Short channel thin film transistors suffer from unacceptably high leakage currents. The invention provides an electronic device including a thin film transistor in which the length (20) of the channel of the transistor is 1µm or less, and the mobility of
Deane, Steven C. +2 more
core +2 more sources
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Carbon nanotube thin-film transistor is promising for solution-processed, large-scale flexible electronics, but the device yields remain poor to date. Lei et al.
Ting Lei +11 more
doaj +1 more source
Measurement and modelling of low-frequency noise in polysilicon thin-film source-gated transistors
The thin-film source-gated transistor (SGT) structure (cross-section schematic in Fig. 1(a)) features many advantages for analog applications, such as low saturation voltage and output conductance, thanks to the overlap between the gate and the Schottky ...
International Thin-film Transistor Conference +1 more
core
Lead Halide Perovskite Photoelectrocatalysis
Lead halide perovskite semiconductors have emerged as highly promising materials for solar fuel and chemical synthesis. This perspective discusses advances made in the rational photoelectrode design to improve solar‐to‐chemical conversion, product scope, and scalability.
Virgil Andrei
wiley +1 more source
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang +10 more
wiley +1 more source
Composite P3HT/ZnO thin films via FTM for improved charge transport in OFETs
Zinc oxide (ZnO) nanorods, measuring 500 nm in diameter and 100 nm in length, were created in this article using an optimised hydrothermal low temperature technique.
A. S. M. Tripathi +6 more
doaj +1 more source
Langmuir-Blodgett films of porphyrins and phthalocyanines [PDF]
Phthalocyanines and porphyrins have been studied for many years as bulk, thick and thin films. Their use in Langmuir and Langmuir-Blodgett films is governed their peripheral substituents.
Portus, Dan
core
The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu +7 more
wiley +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source

