Results 111 to 120 of about 21,510 (298)

An electronic device including a thin film transistor [PDF]

open access: yes, 2002
Short channel thin film transistors suffer from unacceptably high leakage currents. The invention provides an electronic device including a thin film transistor in which the length (20) of the channel of the transistor is 1µm or less, and the mobility of
Deane, Steven C.   +2 more
core   +2 more sources

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes

open access: yesNature Communications, 2019
Carbon nanotube thin-film transistor is promising for solution-processed, large-scale flexible electronics, but the device yields remain poor to date. Lei et al.
Ting Lei   +11 more
doaj   +1 more source

Measurement and modelling of low-frequency noise in polysilicon thin-film source-gated transistors

open access: yes
The thin-film source-gated transistor (SGT) structure (cross-section schematic in Fig. 1(a)) features many advantages for analog applications, such as low saturation voltage and output conductance, thanks to the overlap between the gate and the Schottky ...
International Thin-film Transistor Conference   +1 more
core  

Lead Halide Perovskite Photoelectrocatalysis

open access: yesAdvanced Materials, EarlyView.
Lead halide perovskite semiconductors have emerged as highly promising materials for solar fuel and chemical synthesis. This perspective discusses advances made in the rational photoelectrode design to improve solar‐to‐chemical conversion, product scope, and scalability.
Virgil Andrei
wiley   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

open access: yesAdvanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang   +10 more
wiley   +1 more source

Composite P3HT/ZnO thin films via FTM for improved charge transport in OFETs

open access: yesScientific Reports
Zinc oxide (ZnO) nanorods, measuring 500 nm in diameter and 100 nm in length, were created in this article using an optimised hydrothermal low temperature technique.
A. S. M. Tripathi   +6 more
doaj   +1 more source

Langmuir-Blodgett films of porphyrins and phthalocyanines [PDF]

open access: yes, 2002
Phthalocyanines and porphyrins have been studied for many years as bulk, thick and thin films. Their use in Langmuir and Langmuir-Blodgett films is governed their peripheral substituents.
Portus, Dan
core  

Intimate Interaction Between Nucleic Acid and Conjugated Polymers in Organic Electrochemical Transistors Enables Ultrasensitive Biomarker Detection

open access: yesAdvanced Materials, EarlyView.
The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu   +7 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Home - About - Disclaimer - Privacy