Results 31 to 40 of about 34,002 (306)

Organic transistors based on pentacene and dibenzothiophene derivatives [PDF]

, 2008
This thesis is concerned with the fabrication and characterisation of organic thin film transistors. Initially, pentacene thin films were investigated, with results comparable to those found in published literature.
Kolb, Daniel
core  

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Thickness Effect on Operational Modes of ZnGa₂O₄ MOSFETs

IEEE Journal of the Electron Devices Society, 2018
The device mechanism from depletion to enhancement mode for ZnGa2O4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the
Li-Chung Cheng, Chiung-Yi Huang, Ray-Hua Horng   +2 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Incorporating aligned carbon nanotube electrode arrays in organic thin-film transistors

AIP Advances, 2019
We introduce a very simple technique to obtain aligned carbon nanotube arrays tested in organic thin-film transistors based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) as the organic semiconductor.
Zhihui Yi, Jonathan Sayago
doaj   +1 more source

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

IEEE Journal of the Electron Devices Society, 2021
We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of ...
Benjamin Iniguez, Arokia Nathan, Alexander Kloes, Yvan Bonnassieux, Krunoslav Romanjek, Micael Charbonneau, Jan Laurens Van Der Steen, Gerwin Gelinck, Thomas Gneiting, Firas Mohamed, Gerard Ghibaudo, Antonio Cerdeira, Magali Estrada, Slobodan Mijalkovic, Ahmed Nejim   +14 more
doaj   +1 more source

High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator [PDF]

, 2011
—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 ...
Wei, Chia-Yu, Huang, Wen-Chieh, Kuo, Shu-Hao, Wang, Yeong-Her, Hung, Yu-Ming, Adriyanto, Feri   +5 more
core  

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Gate-bias stress in amorphous oxide semiconductors thin-film transistors [PDF]

, 2009
A quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium zinc oxide amorphous thin-film transistors is presented using standard analysis based on the stretched exponential relaxation.
Martins, R., Medeiros, M. C. R., M. C. R. Medeiros, Barquinha, P., H. L. Gomes, R. Martins, P. Barquinha, I. Ferreira, L. Pereira, M. E. Lopes, Fortunato, E., Lopes, M. E., Pereira, L. M. C., E. Fortunato, Gomes, Henrique L., Ferreira, I.   +15 more
core   +1 more source