Results 31 to 40 of about 83,993 (296)

Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate

open access: yesMaterials Letters: X, 2022
Ga2O3 has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In1−xGax)2O3 thin film grown on an ε-GaFeO3 substrate via ...
Hiroyuki Nishinaka   +4 more
doaj   +1 more source

Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

open access: yes, 2015
We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol,
Balandin, A. A.   +4 more
core   +1 more source

Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors [PDF]

open access: yes, 2019
An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved ...
Kim, Hae-Jin   +5 more
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Synthesis of thin-film black phosphorus on a flexible substrate

open access: yes, 2015
We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a ...
Cha, Judy   +10 more
core   +1 more source

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

open access: yesAdvanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich   +6 more
wiley   +1 more source

Organic small molecule field-effect transistors with Cytop(TM) gate dielectric: eliminating gate bias stress effects

open access: yes, 2007
We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM).
Batlogg, Bertram   +4 more
core   +1 more source

Thermopower measurements on pentacene transistors [PDF]

open access: yes, 2006
We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment.
Bussac, Marie-Noelle   +4 more
core   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

open access: yesAdvanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein   +4 more
wiley   +1 more source

Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs

open access: yesIEEE Journal of the Electron Devices Society, 2018
The device mechanism from depletion to enhancement mode for ZnGa2O4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the
Li-Chung Cheng   +2 more
doaj   +1 more source

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