Results 61 to 70 of about 83,993 (296)

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Scientific Reports, 2017
Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices.
Hocheon Yoo, Matteo Ghittorelli, Dong-Kyu Lee, Edsger C. P. Smits, Gerwin H. Gelinck, Hyungju Ahn, Han-Koo Lee, Fabrizio Torricelli, Jae-Joon Kim   +8 more
doaj   +1 more source

Compact modeling of organic thin film transistors with solution processed octadecyl substituted tetrabenzotriazaporphyrin as an active layer [PDF]

, 2017
Using 70nm thick spin-coated film of newly synthesized octadecyl substituted copper tetrabenzotriazaporphyrin (10CuTBTAP) as an active layer on a highly doped silicon (110) gate electrode substrates, output characteristics and transfer characteristics of
Cammidge, Andrew N., Chambrier, Isabelle, Chaure, Nandu B., Cook, Michael J., Jiménez Tejada, Juan A., Ray, Asim K., Varo, Pilar López   +6 more
core   +3 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]

, 2009
—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Adriyanto, Feri, Chou, Dei-Wei, Huang, Tong-Jyun, Li, Yu-Chang, Lin, Yu-Ju, Wang, Yeong-Her, Wei, Chia-Yu   +6 more
core  

Electronic structure and transport in amorphous metal oxide and amorphous metal oxy-nitride semiconductors

, 2019
Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO)
Bhowmick, Somnath, Gaur, Anshu, Nahas, Suhas, Srivastava, Juhi   +3 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Aluminium oxide prepared by atomic layer deposition in organic thin-film transistors operating at 2 V : comparison with UV-ozone oxidation [PDF]

, 2014
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid ...
Gleskova, Helena, Hannah, Stuart
core   +1 more source

Kinetic Regimes of Hydrogen Absorption in Thin Films

Advanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco, Sabine Pütter, Yury N. Khaydukov, Luca Silvi, Mariano A. Paulin, Attila Csik, Thomas Keller, Bernhard Keimer   +7 more
wiley   +1 more source

Deformation-aware design of flexible strained-SiGe channel TFTs

Discover Electronics
In this study, we present a novel deformation-aware predictive modeling and design process for flexible electronic applications of strained-SiGe channel thin-film transistors using a 3D Technology CAD simulation framework.
C. K. Maiti, Taraprasanna Dash
doaj   +1 more source