Results 61 to 70 of about 7,018 (266)

Changes in Strength Properties of Torsion-Loaded Thin-Walled Channel Beam Caused by Constructional Modifications Introduced Based on Statical Analyses

open access: yesEngineering Transactions, 2015
The paper presents results of linear finite element method (FEM) analyses of a thin-walled channel beam in whose central part there are introduced some variants of constructional modifications aimed at improving beam’s ability to carry torsional load ...
Ireneusz MARKIEWICZ
doaj   +1 more source

Deflections of thin-walled pretwisted beams.

open access: yesTRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A, 1985
薄肉断面を有する初期ねじれはりの変形解析に必要な微分方程式・境界条件を, 微小変形はり理論の立場から導いた. 初期ねじれはりのねじれ変形解析に必要な幾何学的量を明確にし, その近似式を提案するとともに, 長方形断面に対してその精度を確認した. 薄肉長方形断面初期ねじれはりの引張荷重によるひずみを, 理論的にまた実験的に求め, 両者を比較検討することにより, 本論文で導いた微分方程式の有用性を明らかにした.
TSUIJI, Tsuneo, YAMASHITA, Tsutomu
openaire   +2 more sources

Si‐Doped Nanocrystalline Diamond as Highly Sensitive Luminescence Thermometer for the Physiological Temperature Range

open access: yesAdvanced Functional Materials, EarlyView.
In this work, diamonds with negative charged silicon‐vacancy (SiV−) centers have been designed for use as thermometers in biomedical applications. Multiparametric analysis of the emission characteristics of the SiV− centers provides extraordinary sensitivity for temperature detection in the physiological temperature range.
María Gragera   +6 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

open access: yesAdvanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao   +4 more
wiley   +1 more source

One‐Step Curcumin‐Mediated Multiphoton Lithography for Bioactive 3D Scaffolds

open access: yesAdvanced Functional Materials, EarlyView.
Curcumin‐mediated multiphoton lithography enables one‐step fabrication of highly architected complex gelatin methacryloyl scaffolds by exploiting curcumin as a multifunctional bioactive photoinitiator. The resulting 3D structures support mesenchymal stem cell adhesion, proliferation, and migration, while exhibiting dual antibacterial activity through ...
Myrto Charitaki   +7 more
wiley   +1 more source

Analysis of Restrained Torsion and Distortion Effect for Thin walled Box Girder Structure Based on Displacement Field

open access: yes工程科学与技术, 2009
:On the basis of the hypothetic displacement field, various parameters of the box girder section are concentrated in the structural axis, and the displacement model of the generalized degree of freedom is built based on the mechanical character of the ...
doaj  

Meniscus‐Guided Soft‐Lithographic Assembly of Grid‐Type Molecular Martensite Films for Single‐Crystal‐Like Actuation

open access: yesAdvanced Functional Materials, EarlyView.
A meniscus‐guided microtransfer molding strategy enables scalable fabrication of grid‐type molecular martensite films with b‐axis‐correlated preferential texture. Sequential growth across microchannel intersections creates structurally continuous grids and robust thermoelastic actuation (∼11% strain, > 50 cycles, maximum force density: 7.1 × 109 N m−3).
Sooyeon Ra   +15 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

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