Results 211 to 220 of about 4,534,284 (389)

Mechanical Properties of Architected Polymer Lattice Materials: A Comparative Study of Additive Manufacturing and CAD Using FEM and µ‐CT

open access: yesAdvanced Functional Materials, EarlyView.
This study examines how pore shape and manufacturing‐induced deviations affect the mechanical properties of 3D‐printed lattice materials with constant porosity. Combining µ‐CT analysis, FEM, and compression testing, the authors show that structural imperfections reduce stiffness and strength, while bulk material inhomogeneities probably enhance ...
Oliver Walker   +5 more
wiley   +1 more source

Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. [PDF]

open access: yesNanomaterials (Basel)
Torres-Sánchez A   +4 more
europepmc   +1 more source

Excellent near-infrared transmission of Zr-based thin film metallic glasses

open access: gold, 2018
Haitao Zong   +6 more
openalex   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Squeezed light generation in periodically poled thin-film lithium niobate waveguides. [PDF]

open access: yesNanophotonics
Shi X   +14 more
europepmc   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

Programmable Bell state generation in an integrated thin film lithium niobate circuit. [PDF]

open access: yesLight Sci Appl
Maeder A   +5 more
europepmc   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

open access: yesAdvanced Functional Materials, EarlyView.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert   +15 more
wiley   +1 more source

Addendum: Big data driven perovskite solar cell stability analysis

open access: yesNature Communications
Zhuang Zhang   +3 more
doaj   +1 more source

Home - About - Disclaimer - Privacy