Results 101 to 110 of about 17,711 (258)

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Journal of Advanced Dielectrics
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator.
Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan   +2 more
doaj   +1 more source

Thin film transistor

, 1999
A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain.
Sin, Johnny K.O., Kottarath Parambil, Anish Kumar   +1 more
core  

Intimate Interaction Between Nucleic Acid and Conjugated Polymers in Organic Electrochemical Transistors Enables Ultrasensitive Biomarker Detection

Advanced Materials, EarlyView.
The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu, Naixiang Wang, Anneng Yang, Jiajun Song, Li Li, Iain McCulloch, Helen Ka‐wai Law, Feng Yan   +7 more
wiley   +1 more source

An electronic device including a thin film transistor [PDF]

, 2002
Short channel thin film transistors suffer from unacceptably high leakage currents. The invention provides an electronic device including a thin film transistor in which the length (20) of the channel of the transistor is 1µm or less, and the mobility of
Deane, Steven C., Battersby, Stephen J., van der Zaag, Pieter J.; id_orcid   +2 more
core   +2 more sources

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes

Nature Communications, 2019
Carbon nanotube thin-film transistor is promising for solution-processed, large-scale flexible electronics, but the device yields remain poor to date. Lei et al.
Ting Lei, Lei-Lai Shao, Yu-Qing Zheng, Gregory Pitner, Guanhua Fang, Chenxin Zhu, Sicheng Li, Ray Beausoleil, H.-S. Philip Wong, Tsung-Ching Huang, Kwang-Ting Cheng, Zhenan Bao   +11 more
doaj   +1 more source

Measurement and modelling of low-frequency noise in polysilicon thin-film source-gated transistors

The thin-film source-gated transistor (SGT) structure (cross-section schematic in Fig. 1(a)) features many advantages for analog applications, such as low saturation voltage and output conductance, thanks to the overlap between the gate and the Schottky ...
International Thin-film Transistor Conference, Chen, Qi   +1 more
core  

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

Advanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho, Sina Jamali, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +3 more
wiley   +1 more source

Multilayered Digital Microfluidic Chip for Cell‐Based Assays

Advanced Materials Interfaces, EarlyView.
A multilayered digital microfluidic (mDMF) chip architecture is introduced to improve throughput and robustness in cell‐based assays. By multilayering electrode components and dielectric layers on glass, this design significantly reduces actuation voltage, maintains reliability, and enables expansion of the operational area with minimum current leakage.
Mert Ozden, Oksana K. Savchak, Burcu Gumuscu   +2 more
wiley   +1 more source