Results 101 to 110 of about 2,934,887 (331)

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

A Current Supply with Single Organic Thin-Film Transistor for Charging Supercapacitors

, 2016
We present a current supply, comprising a single organic thin-film transistor (OTFT), for the charging of supercapacitors. The current supply takes power from the electric grid (115 V AC, US standard), converts the AC voltage to a quasi-constant DC ...
Larsen, C.,, Tu, Deyu,, Tu, D., Edman, Ludvig,, Forchheimer, R., Keshmiri, Vahid,, Keshmiri, V., Forchheimer, Robert,, Edman, L.,, Larsen, Christian,   +9 more
core   +1 more source

2-Bit/Cell Operation of Hf_0.5Zr_0.5O₂ Based FeFET Memory Devices for NAND Applications

IEEE Journal of the Electron Devices Society, 2019
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou   +6 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Thermodynamic Limits to Molecular Doping in Conjugated Polymers: A Perspective on Phase Behavior and Miscibility

Advanced Materials, EarlyView.
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani, Justin Neu, Sung‐Joo Kwon, Runqio Song, Zixuan Chen, Tajah Trapier, Paschalis Gkoupidenis, David Ginger, Wei You, Jasper J. Michels, Harald Ade   +10 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Measurement and modelling of low-frequency noise in polysilicon thin-film source-gated transistors

The thin-film source-gated transistor (SGT) structure (cross-section schematic in Fig. 1(a)) features many advantages for analog applications, such as low saturation voltage and output conductance, thanks to the overlap between the gate and the Schottky ...
International Thin-film Transistor Conference, Chen, Qi   +1 more
core  

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

Amorphous metal-oxide semiconductor thin-film neuron, synapse, and neuromorphic system

Scientific Reports
Artificial intelligence will spread exponentially and requires compact size and energy efficiency, for which one solution is neuromorphic systems. On the other hand, thin-film semiconductor technologies have spread widely and feature as giant-micro ...
Mutsumi Kimura, Yuji Miyato, Michihiro Shintani, Mami N. Fujii, Yusaku Magari, Hidenori Kawanishi, Tokiyoshi Matsuda, Juan Paolo S. Bermundo, Takanori Takahashi, Yukiharu Uraoka, Takumi Kuwahara, Reon Oshio, Yasuhiko Nakashima, Yi-Chien Chen, Chung-Tien Chiu, Chih-Lung Lin   +15 more
doaj   +1 more source

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Journal of Advanced Dielectrics
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator.
Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan   +2 more
doaj   +1 more source