Results 111 to 120 of about 65,558 (285)

Gate protective device for insulated gate field-effect transistors [PDF]

, 1972
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region.
Sunshine, R. A.
core   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Composite P3HT/ZnO thin films via FTM for improved charge transport in OFETs

Scientific Reports
Zinc oxide (ZnO) nanorods, measuring 500 nm in diameter and 100 nm in length, were created in this article using an optimised hydrothermal low temperature technique.
A. S. M. Tripathi, A. Dubey, J. F. Blach, F. Hochede, S. Saitzek, Y. Boussoualem, A. Daoudi   +6 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Large‐Area 2D Metasurface‐Based Triboelectric E‐Skin Arrays: Contact & Proximity Tactile Mapping with Broadband Acoustic Readouts

Advanced Materials, EarlyView.
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief, Swagato Sarkar, Anik Kumar Ghosh, Osvalds Verners, Kamal Kumar Meena, Su‐Hyeong Lee, Soosang Chae, Tobias A. F. König, Beate Krause, Andreas Fery, Mehmet Sait Özer, Anindya Nag, Amit Das   +12 more
wiley   +1 more source

Multifunctional Bio‐Based Packaging for Perishable Foods: Structural Design, Scalable Fabrication, and Versatile Applications

Advanced Materials, EarlyView.
An overview of design principles and scalable fabrication strategies for multifunctional bio‐based packaging. Radiative cooling films, modified‐atmosphere films/membranes, active antimicrobial/antioxidant platforms, intelligent optical/electrochemical labels, and superhydrophobic surfaces are co‐engineered from material chemistry to mesoscale structure
Lei Zhang, Jiaqi Zhang, Mei Cui, Wei Qi, Renliang Huang, Rongxin Su, Kai Zhang   +6 more
wiley   +1 more source

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate [PDF]

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf ...
Bhasin, K. B., Kapoor, V. J., Nahra, J. J., Subramanyam, G., Toncich, S. S.   +4 more
core   +1 more source

Short‐Wavelength Infrared Imaging with Organic Photodetectors Based on Non‐Fullerene Acceptors with Detection above 1200 nm

Advanced Materials, EarlyView.
Solution‐processed organic photodetectors (OPDs) based on two novel low band gap non‐fullerene acceptors BZIC‐2F and BZIC‐2Cl, when blended with common polymer donor P3HT, extend detection range beyond 1200 nm with superior performance, rivaling costly inorganic sensors and past literature.
Zhuoran Qiao, Sandeep Sharma, Yakun He, Marie Houot, Kun‐Han Lin, Davide Nodari, Filip Aniés, Matilde Brunetta, Patipan Sukpoonprom, Eunyoung Hong, Edoardo Angela, Zian Wang, Pichaya Pattanasattayavong, Martyn A. McLachlan, Artem Bakulin, Denis Andrienko, Frédéric Laquai, Martin Heeney, Nicola Gasparini   +18 more
wiley   +1 more source

New‐Era Polymer Thermoelectrics: Material Innovations, Doping Frontiers, Decoupling Strategies, and Unconventional Applications

Advanced Materials, EarlyView.
The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley   +1 more source

On the Transconductance of Polysilicon Thin Film Transistors

Журнал нано- та електронної фізики, 2011
In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the grain boundary trap states.
Panwar, Alka, Tyagi, B.P.
openaire   +2 more sources