Environmental Effects on the Performance of Small‐Molecule Organic Thin‐Film Transistors
Advanced Materials InterfacesElectrical measurements are performed on a bottom‐gate bottom‐contact organic thin‐film transistor with 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene (diF‐TES ADT) (diF‐TES ADT) as the active layer, varying the relative humidity of the ...
Zafrullah Jagoo, L.E. McNeil
doaj +1 more source
Ion Concentration and Voltage Imaging With Fluorescent Nanodiamonds
Advanced Materials, EarlyView.We demonstrate reversible switching between the fluorescent NV0 and the dark NV+ state, in sub‐30 nm FNDs via surface oxidation and hydrogenation, respectively. In an electrochemical cell, we show that the fluorescence from hydrogenated particles enables all‐optical imaging of voltages and ion concentrations at the micrometer scale.
Patrick Voorhoeve +8 more
wiley +1 more source
Growth optimisation and laser processing of thin film phosphors for electroluminescent displays [PDF]
, 2010 This thesis presents results of a study of ZnS:Mn thin film phosphors used in Thin Film ELectroluminescent (TFEL) and Laterally Emitting TFEL (LETFEL) devices, examining techniques for phosphor growth optimisation and post deposition processing in order ...
Boutaud, G
core
Advanced Materials, EarlyView.A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi +12 more
wiley +1 more source
A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits. [PDF]
IEEE Trans Electron Devices, 2023 Vatsyayan R, Dayeh SA.
europepmc +1 more source
Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection
Advanced Materials, EarlyView.This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park +9 more
wiley +1 more source
Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis. [PDF]
Nanomaterials (Basel), 2023 Kim D +5 more
europepmc +1 more source
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Advanced Materials, EarlyView.Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor. [PDF]
Nanomaterials (Basel), 2023 Chang Y, Bukke RN, Bae J, Jang J.
europepmc +1 more source
Advanced Materials, EarlyView.The interfacial spin‐orbit interaction in single‐crystalline Fe1−xCox thin films grown on GaAs(001) can be continuously tuned via alloying. Using spin‐orbit ferromagnetic resonance, the authors find that the interfacial spin‐orbit fields exhibit a nonmonotonic dependence on Co concentration, with a minimum at 20% Co. ABSTRACT The discovery of intrinsic
Hongrui Lao +9 more
wiley +1 more source