Results 131 to 140 of about 65,558 (285)

Backbone Engineering of Carbon‐Centered NHC‐Derived Diradicals: From Electronic State Tuning to High‐Performance Organic Field‐Effect Transistors

Advanced Materials, EarlyView.
The open‐shell nature of diradicals facilitates charge separation, and compounds with moderate diradical character demonstrate remarkable potential in organic field‐effect transistors (OFET) applications due to their low reorganization energies for hole and electron transport.
Xiao‐Xu Liu, Lianghui Li, Xin Li, Can Chen, Man Li, Shun Tian, Paul J. Dyson, Ying‐Feng Han   +7 more
wiley   +1 more source

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Micromachines
Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy.
Florin Gherendi, Daniela Dobrin, Magdalena Nistor   +2 more
doaj   +1 more source

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

Advanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel, Arya Vidhan, Shubham Gupta, Vaishali Arunachalam, Simantini Nayak, Neeraj Bhatt, Ravi Shankar Singh, Shaibal K. Sarkar, Pabitra K. Nayak   +8 more
wiley   +1 more source

The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors

IEEE Journal of the Electron Devices Society
Amorphous oxide semiconductor-thin film transistors (AOS-TFTs) have attracted considerable attention due to their impressive performance in various applications. However, there is a limited amount of study available on the reliability of AOS-TFTs.
Jie Luo, Yanyu Yang, Gangping Yan, Chuqiao Niu, Yunjiao Bao, Yupeng Lu, Zhengying Jiao, Jinjuan Xiang, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao, Jun Luo   +12 more
doaj   +1 more source

A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits. [PDF]

IEEE Trans Electron Devices, 2023
Vatsyayan R, Dayeh SA.
europepmc   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis. [PDF]

Nanomaterials (Basel), 2023
Kim D, Lee H, Ejderha K, Yun Y, Bae JH, Park J.   +5 more
europepmc   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

Advanced Materials Interfaces, EarlyView.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk, Michał Suplewski, Jacek Łubiński, Jakub Gierowski, Monika Kosowska, Mirosław Sawczak, Mattia Pierpaoli, Filip Janiak, Małgorzata Szczerska   +8 more
wiley   +1 more source

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor. [PDF]

Nanomaterials (Basel), 2023
Chang Y, Bukke RN, Bae J, Jang J.
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source