Results 231 to 240 of about 2,934,887 (331)
Advanced Science, EarlyView.Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili +15 more
wiley +1 more source
Battery‐Inspired Electrochemical Synapses for Neuromorphic Applications
Advanced Science, EarlyView.Battery‐ion‐inspired synaptic devices integrate diverse electrolyte systems (solid, ion‐gel, liquid) with transition metal oxides, two‐dimensional materials, and organic channels to regulate ion‐electron coupling. By tailoring ion transport and host interactions, these platforms enable controllable plasticity and energy‐efficient implementations for ...
Won Woo Lee +6 more
wiley +1 more source
Feasibility of a silicon thin film transistor-based aptamer sensor for COVID-19 detection
, 2020 Farrow T +4 more
europepmc +1 more source
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Fabrication of Flexible MoS2 Thin-Film Transistor Arrays for Practical Gas-Sensing Applications
Small, 2012Hua Zhang, Zhiyuan Zeng, Qiyuan He
exaly +2 more sources
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
Thin Solid Films, 2012Jin-Seong Park +2 more
exaly +2 more sources
High-Performance Carbon Nanotube Thin-Film Transistor Technology.
ACS Nano, 2023Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era.
Lian-Mao Peng
semanticscholar +1 more source
High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor
Nanotechnology, 2021In this work, high-dielectric-constant (high-k) erbium oxide（Er2O3）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C).
Guandong Wang +4 more
semanticscholar +1 more source
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor
IEEE Transactions on Electron Devices, 2020In this article, the effects of two-step annealing at the active layer (AL) and the completed device on the electrical properties and stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) are studied.
Cong Peng +4 more
semanticscholar +1 more source
High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition
Applied Physics Letters, 2018Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for transparent thin film transistors. However, the nature of the process used to fabricate these films causes most binary metal oxide thin films to be highly ...
Jongchan Lee +6 more
semanticscholar +1 more source
Electronics and Power, 1969
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
openaire +1 more source
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
openaire +1 more source