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Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation
Advanced Electronic Materials, EarlyView.We introduce a three‐step hydrogen annealing method for oxide semiconductor devices that modulates hydrogen incorporation and its passivation behavior. Consequently, interface traps are suppressed, whereas the mobility, reliability, and data retention of the IGO‐based 2T0C DRAM are simultaneously improved.
Jun‐Yeoub Lee +5 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Feasibility of a silicon thin film transistor-based aptamer sensor for COVID-19 detection
, 2020 Farrow T +4 more
europepmc +1 more source
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Ambipolar Oxide Thin‐Film Transistor
Advanced Materials, 2011Kenji Nomura +2 more
exaly +3 more sources
Electronics and Power, 1969
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
openaire +2 more sources
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
openaire +2 more sources
Microelectronics Reliability, 2002
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N. +2 more
openaire +2 more sources
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N. +2 more
openaire +2 more sources
An adaptive thin film transistor
1966 International Electron Devices Meeting, 1966A thin film transistor (TFT) is described and demonstrated whose transfer characteristic can be reversibly adapted by a short duration voltage pulse applied to a high impedance gate electrode. The device is a four terminal-two gate structure: A source, drain, and insulator gate contact form the basic TFT while the amount of polarity of the polarization
S.S. Perlman, K.H. Ludewig
openaire +1 more source
Chemical Society Reviews, 2010
Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
openaire +3 more sources
Advanced Materials, 2009
AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
openaire +1 more source
AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
openaire +1 more source
Solvent-gated thin-film-transistors
Physical Chemistry Chemical Physics, 2017TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.
Kyriaki Manoli +6 more
openaire +3 more sources