Results 21 to 30 of about 17,711 (258)

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

open access: yesAdvanced Electronic Materials, 2022
The vertical thin film transistor (VTFT) has several advantages over the planar thin film transistor, such as a high current density and low operating voltage, because of the structural specificity.
Goeun Pyo   +7 more
doaj   +1 more source

A Hybrid Phototransistor Neuromorphic Synapse

open access: yesIEEE Journal of the Electron Devices Society, 2019
In this paper, a synaptic transistor based on the indium zinc oxide (IZO)-hafnium oxide (HfO2) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the presynaptic stimulus, the IZO channel was used as the postsynaptic membrane ...
Yu Liu   +7 more
doaj   +1 more source

Facile Electroless Deposition of Zinc Oxide Ultrathin Film for Zinc Acetate Solution-processed Transistors

open access: yesInternational Journal of Electrochemical Science, 2012
A low-cost, ultra-thin, transparency and high-quality zinc oxide (ZnO) film was successfully demonstrated as the carrier transporting and semiconducting layer for thin-film transistor (TFT) devices.
Min-Ching Chu   +6 more
doaj   +1 more source

Electronic transport, field effect and doping in pentacene nanorods and monolayer thin film prepared by combination of nano-fabrication and self-assembly [PDF]

open access: yes, 2008
The transport in organic semiconductors is investigated on the nanometer scale. Field effect transistor with device-active layers in the monolayer (ML) range are characterized in-situ right after the controlled deposition of pentacene.
Vanoni, Claudio
core   +1 more source

Performance Investigation of Single Grain Boundary Junctionless Field Effect Transistor

open access: yesIEEE Journal of the Electron Devices Society, 2016
In this paper, we report a single grain boundary (GB) junctionless thin film transistor (JLFET) on recrystallized polycrystalline silicon (poly-Si JLFET).
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj   +1 more source

High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors

open access: yesCommunications Materials, 2023
Solution-processable organic thin-film transistors are needed for device applications. Here, solution-processed organic semiconductors and amorphous metal oxide semiconductors are integrated into a transistor, with five-stage complementary ring ...
Xiaozhu Wei   +7 more
doaj   +1 more source

Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

open access: yesIEEE Journal of the Electron Devices Society, 2019
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and ...
Yu-Ru Lin   +3 more
doaj   +1 more source

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors [PDF]

open access: yes, 2016
We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide (ZIZO) TFT.
Takamura, Yuzuru   +3 more
core   +1 more source

Biotin-Functionalized Semiconducting Polymer in an Organic Field Effect Transistor and Application as a Biosensor

open access: yesSensors, 2012
This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor.
Yong Suk Yang   +4 more
doaj   +1 more source

High-performance oxide thin film transistor fully fabricated by a direct rheology imprinting [PDF]

open access: yes, 2017
Operation of all oxide thin-film transistors fully fabricated by a direct rheology-imprinting technique was demonstrated. In the device, a highly conductive amorphous La-Ru-O (8 × 10^ Ω cm) was used as the gate and source/drain electrodes.
Phan, Tue Trong   +2 more
core   +1 more source

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