Results 41 to 50 of about 65,558 (285)
A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
IEEE Journal of the Electron Devices Society, 2017 A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was
Yuxing Li +11 more
doaj +1 more source
ChemistryOpen, 2021 In this paper, we described the design, synthesis, and characterization of two novel naphthalene diimide (NDI) core‐based targets modified with terminal fullerene (C60) yield – so called S4 and S5, in which NDI bearing 1 and 2 molecules of C60 ...
Shailesh S. Birajdar +8 more
doaj +1 more source
MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
IEEE Journal of the Electron Devices Society, 2021 We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu +5 more
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On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [PDF]
, 2009 A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications.
Hueting, R.J.E. +4 more
core +3 more sources
Advanced Functional Materials, EarlyView.Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein +4 more
wiley +1 more source
Thin-film ZnO charge-trapping memory cell grown in a single ALD step [PDF]
, 2012 Cataloged from PDF version of article.A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the
Cimen, F. +5 more
core +1 more source
Photoswitching Conduction in Framework Materials
Advanced Functional Materials, EarlyView.This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez +4 more
wiley +1 more source
Superconducting ''transistor'' acts as high-speed switch [PDF]
, 1970 Cryogenic, three-terminal device yields current-voltage characteristics of ordinary transistor. Device consists of two superconducting tin rods in a crossed-wire geometry, separated by a thin gold film.
Meissner, H.
core +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Turning an organic semiconductor into a low-resistance material by ion implantation
Science and Technology of Advanced Materials, 2015 We report on the effects of low energy ion implantation on thin films of pentacene, carried out to investigate the efficacy of this process in the fabrication of organic electronic devices.
Beatrice Fraboni +6 more
doaj +1 more source