Results 51 to 60 of about 2,934,887 (331)
Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]
, 2009 —Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Chou, Dei-Wei +6 more
core
Advances in Sustainable and Wearable Textile Based Soft Robotics
Advanced Functional Materials, EarlyView.This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Turning an organic semiconductor into a low-resistance material by ion implantation
Science and Technology of Advanced Materials, 2015 We report on the effects of low energy ion implantation on thin films of pentacene, carried out to investigate the efficacy of this process in the fabrication of organic electronic devices.
Beatrice Fraboni +6 more
doaj +1 more source
A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
IEEE Journal of the Electron Devices Society, 2017 A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was
Yuxing Li +11 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska +5 more
wiley +1 more source
ChemistryOpen, 2021 In this paper, we described the design, synthesis, and characterization of two novel naphthalene diimide (NDI) core‐based targets modified with terminal fullerene (C60) yield – so called S4 and S5, in which NDI bearing 1 and 2 molecules of C60 ...
Shailesh S. Birajdar +8 more
doaj +1 more source
MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
IEEE Journal of the Electron Devices Society, 2021 We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Organic thin-film transistor (OTFT)-based sensors
, 2014 Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors.
D. Elkington +4 more
semanticscholar +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
Advanced Functional Materials, EarlyView.An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source