Results 71 to 80 of about 65,558 (285)

Thermopower measurements on pentacene transistors [PDF]

, 2006
We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment.
Bussac, Marie-Noelle, Errien, Nicolas, Schaer, Michel, von Muehlenen, Adrian, Zuppiroli, Libero   +4 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Gate-planarized thin film transistor substrates and related methods of fabrication [PDF]

, 2012
Thin film transistor substrates with conductor components in conjunction therewith, and related methods of ...
Facchetti, Antonio, Marks, Tobin J.
core   +1 more source

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

, 2010
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and ...
Ikuhara, Yuichi, Kato, Takeharu, Koide, Hirotaka, Koumoto, Kunihito, Nagao, Yuki, Ohta, Hiromichi, Takasaki, Yuka, Umemura, Tomonari   +7 more
core   +1 more source

Kinetic Regimes of Hydrogen Absorption in Thin Films

Advanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco, Sabine Pütter, Yury N. Khaydukov, Luca Silvi, Mariano A. Paulin, Attila Csik, Thomas Keller, Bernhard Keimer   +7 more
wiley   +1 more source

Inkjet Printed Electrodes in Thin Film Transistors

IEEE Journal of the Electron Devices Society, 2018
Inkjet printing is a non-vacuum, non-contact, low-cost, and direct patterning thin film deposition technique. Compared to traditional processes, it demands less materials and energy, simplifies processing steps and is compatible with the fast fabrication
Ruiqiang Tao, Honglong Ning, Jianqiu Chen, Jianhua Zou, Zhiqiang Fang, Caigui Yang, Yicong Zhou, Jianhua Zhang, Rihui Yao, Junbiao Peng   +9 more
doaj   +1 more source

Unlocking Photodetection Mode Switching from a Simple Lateral Design

Advanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong, Keng‐Te Lin, Joel van Embden, Taimur Ahmed, Yumeng Du, Dashen Dong, Yiwen Mai, Junlin Lu, Sumeet Walia, Baohua Jia, Tianyi Ma   +10 more
wiley   +1 more source

Development of GaAs and GaAs/1-x/P/x/ thin-film bipolar transistors Final report [PDF]

Development of GaAs and GaAs/1-xPx thin film bipolar ...
Dean, R. H., Nuese, C. J.
core   +1 more source

Selenium‐Incorporated Polymerized Nonfullerene Acceptors/SWCNT Composites with Polymer‐Assisted n‐Doping for High‐Performance Organic Thermoelectrics

Advanced Functional Materials, EarlyView.
Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng, Che‐An Chou, Chi Chang, Li‐Lun Yeh, Chien‐Yi Ku, Jhih‐Min Lin, Shih‐Huang Tung, Cheng‐Liang Liu, Yen‐Ju Cheng   +8 more
wiley   +1 more source

An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications

Journal of Microwaves, Optoelectronics and Electromagnetic Applications
This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin ...
Siham Belkacemi, Zoubeida Hafdi
doaj   +1 more source