Results 61 to 70 of about 65,558 (285)

Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel

Heliyon, 2019
In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure.
Shashi K. Dargar, Viranjay M. Srivastava
doaj   +1 more source

Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective

, 2006
By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling ...
J. Rogers, J. Y. Murthy, M. A. Alam, N. Pimparkar, Q. Cao, S. Kumar   +5 more
core   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Mobility and threshold voltages comparison of zinc nitride-based thin-film transistor fabricated on Si and glass

Materials Research Express, 2020
The present work reports the fabrication and characterization of high mobility thin-film transistors, where zinc nitride is used as the active layer (∼100 nm thick). For the TFT, the active layer was deposited at room temperature on different substrates (
Sachin Surve, M K Banerjee, Kanupriya Sachdev   +2 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

Advanced Electronic Materials, 2023
Developing electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low‐energy consumption neuromorphic computing systems. Hybrid ionic/electronic three‐terminal synaptic transistors are promising
Alejandro López, Javier Tornos, Andrea Peralta, Isabel Barbero, Francisco Fernandez‐Canizares, Gabriel Sanchez‐Santolino, María Varela, Alberto Rivera, Julio Camarero, Carlos León, Jacobo Santamaría, Miguel Romera   +11 more
doaj   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

APL Materials, 2016
We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA) self-assembled monolayer.
Taekyung Lim, Jonghun Lee, Sanghyun Ju
doaj   +1 more source

Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Nature Communications, 2022
Low cost and low power consumption of transistors are needed for the development of internet of things. Here Chung et al. develop a high performance n-type oxide thin film transistor by introducing a ligand for crosslinking nanoparticles and polymers ...
Juhyeok Lee, Syed Zahid Hassan, Sangjun Lee, Hye Ryun Sim, Dae Sung Chung   +4 more
doaj   +1 more source

Double carrier transport in electron doped region in black phosphorus FET

, 2018
The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region.
Akahama, Yuichi, Hirose, Kohei, Osada, Toshihito, Taen, Toshihiro, Taniguchi, Takashi, Uchida, Kazuhito, Watanabe, Kenji   +6 more
core   +1 more source