Results 201 to 210 of about 28,476 (306)

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

Impact of proton-beam irradiation on the electrical reliability and performance of LTPS and a-IGZO thin-film transistors. [PDF]

Sci Rep
Noh J, Kim M, Kim D, Park S, Lee HG, Jung S, Kim D, Tien NT, Choi B.   +8 more
europepmc   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Controlled Synthesis of Tellurium Nanowires and Performance Optimization of Thin-Film Transistors via Percolation Network Engineering. [PDF]

Nanomaterials (Basel)
Park M, Lyu Z, Song SH, Lee HJ.
europepmc   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

Advanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami, Koshi Oi, Keisuke Yamada, Jiang Pu, Hao Ou, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu   +7 more
wiley   +1 more source

Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors. [PDF]

Nat Commun
Kim KD, Ryoo SK, Yeom MK, Lee SH, Choi W, Kim Y, Choi JH, Xin T, Cheng Y, Hwang CS.   +9 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Optimizing the crystallinity of ZrO₂ gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control. [PDF]

Sci Rep
Jeong H, Yoo SM, Choe M, Baek IH, Jeon W.   +4 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Inkjet printing of amorphous indium aluminum oxide active layers for high-performance thin-film transistors. [PDF]

Sci Rep
Kang J, Wang K.
europepmc   +1 more source