Results 211 to 220 of about 28,476 (306)

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Kang M, Cho K, Kim S.
europepmc   +1 more source

Scalable Wheat Bran‐Algae Composites for Edible Electronics with Spray‐Coated Food‐Grade Conductive Inks

Advanced Electronic Materials, EarlyView.
A fully edible wheat bran–algae substrate is fabricated through scalable mould‐compression and spray‐coating, enabling robust, food‐grade platforms for sustainable electronics. A chitosan barrier improves water resistance and ink compatibility, while activated‐carbon conductive films form uniform electrodes with Ohmic behaviour.
Jaz Johari, Muhua Zhu, Zhiging Wang, Yichen Lang, Georgios Nikiforidis, Mingqing Wang, Mengyan Nie, Shahab Akhavan   +7 more
wiley   +1 more source

Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors. [PDF]

Sci Rep
Oh CE, Jeong HS, Lee SH, Lee HW, Son DH, Kim CH, Kim MH, Son KS, Lim JH, Song SH, Kwon HI.   +10 more
europepmc   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Perovskite Thin-Film Transistors for Ultra-Low-Voltage Neuromorphic Visions. [PDF]

Adv Sci (Weinh)
Rong Y, Yu, Zhang X, Wang T, Wang J, Li Y, Zhao T, He R, Gao Y, Huang C, Xiao S, Qin J, Bai S, Zhu H, Liu A, Chen Y, Song Q.   +16 more
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Control of electrical properties in solution-processed ATO thin-film transistors through gallium doping. [PDF]

RSC Adv
Hwang BK, An JH, Lee BR, Park EJ, Jung H, Son MK, Jung HJ, Heo SW.   +7 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In₂O₃ Thin-Film Transistors. [PDF]

Micromachines (Basel)
Kim T, Lee S, Lee YW, Kim D, Yun Y, Bae JH, Lee H, Park J.   +7 more
europepmc   +1 more source