Results 231 to 240 of about 28,476 (306)

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Correction to "Enrichment of 1.0 Nanometer Diameter Single-Chirality Single-Walled Carbon Nanotubes Dictated by Conjugated Polymer Characteristics: Implications for High-Performance Thin-Film Transistors". [PDF]

ACS Appl Nano Mater
Ouyang J, Shin H, Finnie P, Ding J, Li Z, Mirka B, Malenfant PRL.   +6 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer. [PDF]

Nano Converg
Lee Y, Lee HW, Kim SJ, Park JM, Lee BH, Kang CG.   +5 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Stability Improvement of Solution-Processed Metal Oxide Thin-Film Transistors Using Fluorine-Doped Zirconium Oxide Dielectric. [PDF]

Materials (Basel)
Xu H, Deng B, Zhang X.
europepmc   +1 more source

Towards Real‐Time Monitoring of Soft Robotic Systems in Endoscopic Application With Ultra‐Flexible Organic Transistor‐Based Strain Sensors

Advanced Electronic Materials, EarlyView.
The integration of ultra‐flexible, all‐organic, field‐effect transistor‐based strain sensors to soft structures is reported for the development of sensorized soft robots. The envisaged application is the development of next‐generation, controllable, and observable soft robotic catheters for endoscopic applications, such as drug delivery. Mechanical and
Usama Mahmood, Andrea Bartolucci, Giulia Casula, Antonello Mascia, Lorenzo Vannozzi, Stefano Lai   +5 more
wiley   +1 more source

Low-temperature pressure-assisted liquid-metal printing for β-Ga₂O₃ thin-film transistors. [PDF]

Nat Commun
Huang CH, Cyu RH, Chueh YL, Nomura K.
europepmc   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

A read voltage dependent synaptic characteristics of sub-threshold thin film transistors with a hf doped ZnO active layer. [PDF]

Sci Rep
Pi J, Cha D, Lee S.
europepmc   +1 more source