Results 71 to 80 of about 1,366 (209)
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Gate bias is used to cancel Duffing nonlinearity in atomically thin MoS2 drumhead resonators, switching their response from hardening to softening and creating a nearly linear operating point. This electrical control suppresses hysteresis, enables stronger linear drive, and improves signal‐to‐noise ratio, offering a practical route to stable 2D NEMS ...
Pengcheng Zhang +3 more
wiley +1 more source
CHARACTERISTICS OF RADIONUCLIDES ON THORIUM-CYCLE EXPERIMENTAL POWER REACTOR SPENT FUEL
CHARACTERISTICS OF RADIONUCLIDES ON THORIUM-CYCLE EXPERIMENTAL POWER REACTOR SPENT FUEL. There are several options of nuclear fuel utilisation in the HTGR-based Experimental Power Reactor (Reaktor Daya Eksperimental/RDE). Although mainly RDE utilises low
R. Andika Putra Dwijayanto, S.T. +2 more
doaj +1 more source
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang +4 more
wiley +1 more source
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie +16 more
wiley +1 more source
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim +9 more
wiley +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
ABSTRACT Quantitative characterization of vascular heterogeneity in complex microphysiological systems (MPS), particularly within patient‐derived tumor microenvironments, remains a major challenge for scalable disease modeling and therapeutic evaluation.
Jungseub Lee +9 more
wiley +1 more source
Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long +26 more
wiley +1 more source

