Results 81 to 90 of about 25,825 (296)

Development of techniques for high-resolution spatially-resolved elemental analysis in materials of interest in luminescence dating [PDF]

open access: yes, 2009
A series of analytical techniques have been developed to characterise the surface distribution of elements in a number of materials of archaeological interest, in support of current and future research in luminescence dating techniques. Under certain
GRAINGER, SCOTT
core  

Superlubricity and Corrosion Inhibition Properties of Solvate Ionic Liquids in Hybrid Carbon Fiber Reinforced Plastic–Steel Interfaces

open access: yesAdvanced Engineering Materials, EarlyView.
Solvate ionic liquids lubrication reduced the coefficient of friction by ∼60% compared to dry sliding, reaching steady‐state values as low as 0.04–0.05. Corrosion weight‐loss measurements in 1 M HCl further demonstrated significant inhibition behavior, with only 100 ppm of [Li(G3)][TFSI] (∼68.5 μL/L) reducing corrosion‐product weight loss by 63 ...
Sameh Dabees   +6 more
wiley   +1 more source

Obtaining 228ra (MsTh 1) from thorium nitrate.

open access: yes, 1981
135 kilograms of thorium nitrate purified and recrystallised in 1958 have been treated to extract 228Ra in radioactive equilibrium. Most of the thorium was eliminated by solvent extraction (T.B.P.) and final purification was by chromatography (Dowex 50 W
Arnoux, M, Jerment, J, Gizon, A
core  

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Ts. Dr. Noorlisa develops Safe Thorium Purification Model from Rare Earth Waste [PDF]

open access: yes
PEKAN, 18 August 2025 – The extraction of rare earth elements (REEs) from lanthanide concentrates in Malaysia generates radioactive waste known as Water Leach Purification (WLP).
Nur Hartini, Mohd Hatta
core   +2 more sources

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

Radioactivity of Thorium and Feasibility of in Vivo Thorium Measurements [PDF]

open access: yes, 1959
Tabulations of the radioactivity in the thorium series decay chain and a discussion of the radioactivity variations possible in non-equllibrium conditions of the decay chain are presented.
Cofield, R. E.
core   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

open access: yesAdvanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig   +3 more
wiley   +1 more source

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