Results 161 to 170 of about 6,695 (230)
Assessment of the hazard risks on HVDC transmission networks due to lightning strikes and faults. [PDF]
PLoS OneSaid A, Galal M, Abd-Allah MA.
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Photovoltaic-Related "Black Swan" Hypothesis for Electric Power System: Phenomenology, Simulations, Experiences, and Prevention. [PDF]
Sensors (Basel)Sladic S, Zivic E.
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Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]
J Power ElectronRaza A +5 more
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Miniaturized and High Volumetric Energy Density Power Supply Device Based on a Broad-Frequency Vibration Driven Triboelectric Nanogenerator. [PDF]
Micromachines (Basel)Wu L +5 more
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Nature, 2005
Thyristors are a class of nonlinear electronic device that exhibit bistable resistance--that is, they can be switched between two different conductance states. Thyristors are widely used as inverters (direct to alternating current converters) and for the smooth control of power in a variety of applications such as motors and refrigerators.
F. Sawano +7 more
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Thyristors are a class of nonlinear electronic device that exhibit bistable resistance--that is, they can be switched between two different conductance states. Thyristors are widely used as inverters (direct to alternating current converters) and for the smooth control of power in a variety of applications such as motors and refrigerators.
F. Sawano +7 more
openaire +2 more sources
, 1976 In this volume I attempt to present concisely the physical principles underlying the operation and performance characteristics of the class of semiconductor p-n-p-n switches known as thyristors. The semiconductor controlled rectifier (SCR), the triode AC
Blicher, Adolph, Adolph Blicher
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Journal of Physics D: Applied Physics, 1977
Measurements show that the turn-on process in gate-triggered thyristors is predominantly voltage-controlled. Theory suggests that minority-carrier diffusion in the base regions will determine the rate at which the width of the depletion layer between the n and p bases can decrease.
J Gowar, T M Halim
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Measurements show that the turn-on process in gate-triggered thyristors is predominantly voltage-controlled. Theory suggests that minority-carrier diffusion in the base regions will determine the rate at which the width of the depletion layer between the n and p bases can decrease.
J Gowar, T M Halim
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Journal of The Institution of Engineers (India): Series B, 2020
In today’s world, most household electrical equipments are using power electronics circuits. Most common appliances are television set, computers, and battery chargers. One of the components in all this circuit is thyristor, a solid-state semiconductor device with four layers of alternating N- and P-type materials.
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In today’s world, most household electrical equipments are using power electronics circuits. Most common appliances are television set, computers, and battery chargers. One of the components in all this circuit is thyristor, a solid-state semiconductor device with four layers of alternating N- and P-type materials.
openaire +1 more source
1999
The Silicon Controlled Rectifier (SCR), invented in 1958, in the laboratories of General Electric, is the most important member of the thyristor family of semiconductor components, including the triac, bi-directional diode switch, the silicon controlled switch (SCS), the silicon unilateral and bilateral switches (SUS, SBS) and light activated devices ...
Titu I. Băjenescu, Marius I. Bâzu
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The Silicon Controlled Rectifier (SCR), invented in 1958, in the laboratories of General Electric, is the most important member of the thyristor family of semiconductor components, including the triac, bi-directional diode switch, the silicon controlled switch (SCS), the silicon unilateral and bilateral switches (SUS, SBS) and light activated devices ...
Titu I. Băjenescu, Marius I. Bâzu
openaire +1 more source