Results 131 to 140 of about 33,483 (192)
Advanced Electronic Materials, EarlyView.The single‐molecule with a large transistor‐SiMoT is proposed for the detection of the subgenomic RNA of SARS‐CoV‐2, achieving a diagnostic sensitivity of 98.0% and a specificity of 87.8%. The SiMoT technology, currently at TRL‐5, is suitable for point‐of‐care settings and delivers the result to the end user in 30 min.
Eleonora Macchia +12 more
wiley +1 more source
Effect of Duty Cycle on Properties of Al₂O₃ Ceramic Coatings Fabricated on TiAl Alloy via Cathodic Plasma Electrolytic Deposition. [PDF]
Materials (Basel), 2018 Wang S, Xie F, Wu X, An J.
europepmc +1 more source
Materials Selection Principles for Designing Electro‐Thermal Neurons
Advanced Electronic Materials, EarlyView.Materials property – performance relations are established for new and old electrical materials leveraged as electro‐thermal oscillators emulating neuron dynamics. Robust, reconfigurable, high frequency, low power characteristics are explicitly tied to highly nonlinear electrical transport, small specific heat, and greater electrical than thermal ...
Fatme Jardali +6 more
wiley +1 more source
A Dislocation-Scale Characterization of the Evolution of Deformation Microstructures around Nanoindentation Imprints in a TiAl Alloy. [PDF]
Materials (Basel), 2018 Guitton A +4 more
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Negative differential resistance (NDR) is a key electronic response enabling two‐terminal artificial neurons. Interactions between electro‐thermal localizations and metal–insulator transitions (MITs) are investigated in a 3D multiphysics simulation of a lateral device. These findings demonstrate that the MIT nucleates in regions of high current density,
Adelaide Bradicich +6 more
wiley +1 more source
Carbon fibers coated with graphene reinforced TiAl alloy composite with high strength and toughness. [PDF]
Sci Rep, 2018 Cui S, Cui C, Xie J, Liu S, Shi J.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.This study reveals a novel failure mode in SiO₂/Si₃N₄ stacked capacitors, where dopant diffusion leads to interfacial oxide thinning, reducing dielectric breakdown voltage. Experimental results show that n type capacitors exhibit superior reliability, whereas p type capacitors fail rapidly.
Shuo Wang +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This study investigates the influences of scanning electron microscope (SEM) electron beam irradiation on network carbon nanotube field effect transistors (network CNT FETs), focusing on dose, energy, and dose rate, with the on‐state current (Ion) as the primary metric.
Xiaoxiao Guan +3 more
wiley +1 more source
Million‐Atom Simulation of the Set Process in Phase Change Memories at the Real Device Scale
Advanced Electronic Materials, EarlyView.Multimillion atom simulations reveal the subtle interplay between crystal nucleation and crystal growth from the crystal/amorphous rim in phase change memories based on the Ge2Sb2Te5 prototypical compound, at the length and time scales of the set process in the real devices.
Omar Abou El Kheir, Marco Bernasconi
wiley +1 more source
Directly Transferable, Highly Conductive, and Transparent Sub‐Microfilm of PEDOT:PSS
Advanced Electronic Materials, EarlyView.A novel wet‐transfer technique enables the fabrication of highly conductive (>2000 S cm⁻¹), transparent, and flexible PEDOT:PSS sub‐microfilms. These films exhibit self‐healing properties and can be transferred across substrates without performance loss.
Xiaofang Liu +8 more
wiley +1 more source