Results 181 to 190 of about 33,673 (310)

Realization of a Bilayer Elastic Topological Insulator

open access: yesAdvanced Science, EarlyView.
Bilayer elastic wave topological insulators are experimentally realized, introducing the layer degree of freedom to access four topological phases. This enables diverse domain walls and transmission behaviors, including interlayer conversion and beam splitting.
Chengzhi Ma   +4 more
wiley   +1 more source

Thermally Programmable Two‐Port Non‐Hermitian Acoustic Metastructure for Broadband and Direction‐Dependent Absorption

open access: yesAdvanced Science, EarlyView.
A thermally programmable two‐port non‐Hermitian acoustic metastructure is presented, where temperature acts as a non‐geometric tuning variable. Thermal modulation reconfigures impedance matching and loss‐leakage coupling, enabling exceptional‐point driven, broadband, and direction‐dependent sound absorption without requiring geometric reconfiguration ...
Zichao Guo   +6 more
wiley   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Sustainable Materials for Energy. [PDF]

open access: yesNanomaterials (Basel)
Agresti F   +33 more
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

In‐Operando 4D‐STEM and STEM‐EBIC Imaging of Electric Fields and Charge Carrier Behavior in Biased Silicon p–n Junctions

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a study of how 4D‐STEM centre of mass measurements and STEM‐EBIC can be used to map the positions, directions, and strengths of electric fields in semiconductor devices. The contrast mechanisms of both techniques are tested and compared with simulations to build a robust analysis of an in situ device in the electron microscope ...
Eoin Moynihan   +5 more
wiley   +1 more source

Variation in Alpha-Case Thickness of Ti-xAl Castings. [PDF]

open access: yesMaterials (Basel)
Kang B, Ha T, Lee S, Ju Y, Kim Y.
europepmc   +1 more source

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