Results 181 to 190 of about 347,004 (298)

Characteristics and Microstructure of Coatings of Ultradisperse TiB₂-TiAl Electrodes with Nanosized Additives Deposited on Ti-Gr2 by Non-Contact Electrospark Deposition. [PDF]

Materials (Basel)
Kostadinov G, Nikolov A, Sofronov Y, Penyashki T, Mishev V, Tzaneva B, Dimitrova R, Petrov K, Miltchev R, Gavrilov T.   +9 more
europepmc   +1 more source

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

Advanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu, Yunlong Sun, Hao Luo, Duoduo Zhao, Yuhan Zeng, Xuzihan Zhang, Zhewei Liu, Hao Peng, Zhijing Zhang, Jack Yang, Ji Zhang, Danyang Wang, Junjie Shi, Sean Li   +13 more
wiley   +1 more source

Microstructure and mechanical properties of a high Nb-TiAl alloy with different carbon additions. [PDF]

Sci Rep
Huang F, Xu J, Zhan Z, Cheng Z, Liu Y.
europepmc   +1 more source

Advances in Josephson Junction Materials and Processes Toward Practical Quantum Computing

Advanced Science, EarlyView.
Emerging materials for quantum computing, including crystalline materials, two‐dimensional van der Waals materials, two‐dimensional electron gas systems, ferromagnets, and unconventional (e.g., d‐wave) superconductors, offer opportunities to engineer next‐generation Josephson junctions.
Hyunseong Kim, Gyunghyun Jang, Seungwon Jin, Jaewon An, Dongbin Shin, Hyeon‐Jin Shin, Jie Luo, Akel Hashim, Irfan Siddiqi, Yosep Kim, Long B. Nguyen, Hoon Hahn Yoon   +11 more
wiley   +1 more source

Synergistic Effects of Temperature and Cooling Rate on Lamellar Microstructure Evolution and Mechanical Performance in Ti-44.9Al-4.1Nb-1.0Mo-0.1B-0.05Y-0.05Si Alloy. [PDF]

Materials (Basel)
Tan F, Li Y, Cui J, Liu N, Naseem K, Zhu Z, Tian S.   +6 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Advanced synthesis and multifaceted characterization of Al-Mg alloy foams reinforced with TiH₂ incorporation through friction stir processing. [PDF]

Sci Rep
Rathee S, Nabi S, Srivastava M, Gautam RKS, Kaushik A, Kumar P, Chhabra D, Kumar A, Najar FA, Radu MS, Patel V.   +10 more
europepmc   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Recent Advances in Selective Laser Melting of Cobalt-Free Eutectic High-Entropy Alloys: Design, Microstructure, and Performance Control. [PDF]

Micromachines (Basel)
Tan X, Peng X, Tan W, Huang J, Ding C, Yang Y, Yang J, Chen H, Guo L, Zhang Q.   +9 more
europepmc   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source