Results 121 to 130 of about 457,416 (305)

Time-of-flight anemometer for hot section applications [PDF]

open access: yes
The design, construction and testing of laser anemometer configurations for Hot Section velocity measurements is considered. Optimizing the laser anemometer system necessarily included the data processing algorithms used. It is felt that the requirements
Edwards, R. V.
core   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Minutes of the first meeting on Monday 27th September 1999 [PDF]

open access: yes, 1999
CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee
core  

A Novel Compact Multi-Reflecting Time-of-Flight Mass Spectrometer. [PDF]

open access: yesJ Am Soc Mass Spectrom
Verenchikov AN   +9 more
europepmc   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

open access: yesAdvanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen   +9 more
wiley   +1 more source

Minutes of the third meeting on Monday 28th February 2000 [PDF]

open access: yes, 2000
CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee   +1 more
core  

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

open access: yesAdvanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov   +8 more
wiley   +1 more source

Minutes of the sixth meeting on Monday 27 November 2000 [PDF]

open access: yes, 2000
CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee   +1 more
core  

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