Results 101 to 110 of about 61,426 (293)

FEM analysis to optimally design end mill cutters for milling of Ti-6Al-4V [PDF]

, 2014
This paper presents an FEM analysis conducted for optimally designing end mill cutters through verifying the cutting tool forces and stresses for milling Titanium alloy Ti-6Al-4V.
Kumar, V, Eakambaram, A, Eakambaram, A., Kumar, Vinod, Arivazhagan, A, Arivazhagan, A.; id_orcid, Arivazhagan, A.   +6 more
core   +1 more source

Feasibility of Nitrogen as a Carrier Gas for Inconel Cold Spray in Hydropower Application

Advanced Engineering Materials, EarlyView.
N2, despite being nearly two orders of magnitude cheaper than He, is a feasible carrier gas for cold spray Inconel coatings in hydropower repair applications when higher gas temperature and pressure are used. Reducing powder size significantly improved cavitation resistance, while the addition of fine chromium carbide particles further enhanced erosion
Tianhao Wang, Mayur Pole, Tingkun Liu, Kenneth A. Ross, Christopher B. Smith   +4 more
wiley   +1 more source

Fracture toughness characterization of thin Ti/SiC composites [PDF]

, 2011
Titanium based alloys reinforced uniaxially with silicon carbide fibres (Ti/SiC) are advanced and innovative materials for aerospace vehicles.
Ma, Wei
core  

Incorporation of 3 μm SiCp into Titanium surfaces using a 2.8 kW laser beam of 186 and 373 MJ m-2 energy densities in a nitrogen environment

, 2007
The formation of composite layers using a 2.8 kW laser beam of 186 and 373 MJ m−2 energy densities, on commercial purity titanium surfaces preplaced with 3 μm size, 1-4 vol.% SiCp powder in a 100% nitrogen environment, produced gold colour tracks.
Mridha, S., Baker, T.N.
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Development and characterization of titanium alloy foams

, 2010
Titanium has excellent mechanical properties, a low density and bio-compatibility features. Titanium foam is an attractive material for structural and biomedical applications. Because of these properties and applications we have tried to produce titanium
Ahmad, Sufizar, Ibrahim, Mohd. Halim Irwan, Mohamad Nor, N. H., Muhamad, Norhamidi A., Sahari, Jaafar, Muchtar, Andanastuti, Jamaludin, Khairul Rijal   +6 more
core  

Investigação eletroquímica da superfície de titânio tratada por oxidação térmica [PDF]

, 2014
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro de Ciências da Saúde, Programa de Pós-Graduação em Odontologia, Florianópolis, 2014O processo de oxidação térmica melhora as características na superfície das ligas de titânio pelo aumento
Lucchiari Júnior, Newton Bergamaschi
core  

Corrosion Resistance of Ti6Al4V Titanium Alloy with Modified Surfaces

, 2010
Corrosion behaviour of biocompatible Ti6Al4V titanium alloy has been investigated by using electrochemical impedance spectroscopy in Hank's physiological solution for two modified states of titanium surface.
Branislav Hadzima, Lenka Skublova, Viktor Skorik, Rastislava Mrazikova   +3 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source