Results 141 to 150 of about 53,368 (202)

Long-term outcomes of titanium-nitride-oxide coated stents and drug-eluting stents in acute coronary syndrome: A systematic review and meta-analysis. [PDF]

World J Cardiol
Fahim MAA, Salman A, Khan HA, Hasan SM, Bhojani MF, Aslam S, Haq AZU, Bejugam VR, Nasir BM, Gul W, Moeed A, Abdalla AS, Majid M, Asghar MS, Hasibuzzaman MA.   +14 more
europepmc   +1 more source

Development of a magnified sunlight responsive shape memory bio-composite: effects of titanium nitride (TiN) nanoparticles on a bio-based benzoxazine/epoxy copolymer. [PDF]

Nanoscale Adv
Joseph A, Lawan I, Charoensuk K, Luengrojanakul P, Mora P, Ahn CH, Rimdusit S.   +6 more
europepmc   +1 more source

Deformation of titanium aluminide containing titanium nitride particles

Metal Powder Report, 1998
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Synthesis of Titanium Nitride from Titanium Hydride or Metalic Titanium Powder with Nitrogen and Nitriding Velocity

Synthesis of Titanium Nitride from Titanium Hydride or Metalic Titanium Powder with Nitrogen and Nitriding Velocity
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Hemocompatibility of Titanium Nitride

The International Journal of Artificial Organs, 1992
The left ventricular assist device is based on the principle of the Maillard-Wenkel rotative pump. The materials which make up the pump must present particular mechanical, tribological, thermal and chemical properties. Titanium nitride (TiN) because of its surface properties and graphite because of its bulk characteristics have been chosen.
I, Dion, C, Baquey, B, Candelon, J R, Monties   +3 more
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Reduction‐Nitridation Synthesis of Titanium Nitride Nanocrystals

Journal of the American Ceramic Society, 2003
Titanium nitride (TiN) particles (8 nm) were prepared via a reduction‐nitridation route in an autoclave at 500°C, using TiCl 4 , NH 4 Cl, and metal Na as reactants.
Xiaogang Yang, Cun Li, Lihua Yang, Yan Yan, Yitai Qian   +4 more
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Titanium and titanium nitride contacts to n-type gallium nitride

Semiconductor Science and Technology, 1998
Ti (150 nm), TiN (200 nm) and Ti (5 nm)/TiN (200 nm) contacts have been fabricated on n-type GaN (Si doped , ) and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and C in Ar and to observe the effects of annealing environment on ohmic contact ...
B P Luther, S E Mohney, T N Jackson
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Titanium nitride-molybdenum metallizing method for aluminium nitride

Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium, 1990
A paste containing molybdenum (Mo) and titanium nitride (TiN) powders was printed on aluminium nitride (AlN) substrates and fired. The adhesive strength of substrates metallized with Ni/Au plate was about 25 kg/2.5 mm/sup 2/ and was unchanged after a thermal cycle test.
H. Asai, F. Ueno, N. Iwase, H. Sato, N. Mizunoya, T. Kimura, K. Endo, T. Takahashi, Y. Sugiura   +8 more
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Creep of silicon nitride-titanium nitride composites

Journal of Materials Science, 1993
The effect of particulate TiN additions (0–50 wt%) on creep behaviour of hot-pressed (5 wt%Y2O3 + 2 wt%Al2O3)-doped silicon nitride (HPSN)-based ceramics was studied. Creep was measured using a four-point bending fixture in air at 1100–1340 °C. At 1100 °C, very low creep rates of HPSN with 0–30 wt% TiN are observed at nominal stresses up to 160 MPa. At
Yu. G. Gogotsi, G. Grathwohl
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