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Advanced Materials, Volume 38, Issue 8, 6 February 2026.The microporous Ti12 oxocluster‐based MOF MIP‐177(Ti)‐LT exhibits effective charge separation and long‐lived photogenerated electrons persisting for hours, as revealed by spectroscopy. These electrons cause reversible color changes and enable dark H2 evolution and water splitting, demonstrating remarkable electron storage and redox capability ...
Shilin Yao +15 more
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Deformation of titanium aluminide containing titanium nitride particles
Metal Powder Report, 1998 openaire +1 more source
Synthesis of Titanium Nitride from Titanium Hydride or Metalic Titanium Powder with Nitrogen and Nitriding Velocityopenaire
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Hemocompatibility of Titanium Nitride
The International Journal of Artificial Organs, 1992The left ventricular assist device is based on the principle of the Maillard-Wenkel rotative pump. The materials which make up the pump must present particular mechanical, tribological, thermal and chemical properties. Titanium nitride (TiN) because of its surface properties and graphite because of its bulk characteristics have been chosen.
I, Dion +3 more
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Reduction‐Nitridation Synthesis of Titanium Nitride Nanocrystals
Journal of the American Ceramic Society, 2003Titanium nitride (TiN) particles (8 nm) were prepared via a reduction‐nitridation route in an autoclave at 500°C, using TiCl 4 , NH 4 Cl, and metal Na as reactants.
Xiaogang Yang +4 more
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Titanium and titanium nitride contacts to n-type gallium nitride
Semiconductor Science and Technology, 1998Ti (150 nm), TiN (200 nm) and Ti (5 nm)/TiN (200 nm) contacts have been fabricated on n-type GaN (Si doped , ) and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and C in Ar and to observe the effects of annealing environment on ohmic contact ...
B P Luther, S E Mohney, T N Jackson
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Titanium nitride-molybdenum metallizing method for aluminium nitride
Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium, 1990A paste containing molybdenum (Mo) and titanium nitride (TiN) powders was printed on aluminium nitride (AlN) substrates and fired. The adhesive strength of substrates metallized with Ni/Au plate was about 25 kg/2.5 mm/sup 2/ and was unchanged after a thermal cycle test.
H. Asai +8 more
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Creep of silicon nitride-titanium nitride composites
Journal of Materials Science, 1993The effect of particulate TiN additions (0–50 wt%) on creep behaviour of hot-pressed (5 wt%Y2O3 + 2 wt%Al2O3)-doped silicon nitride (HPSN)-based ceramics was studied. Creep was measured using a four-point bending fixture in air at 1100–1340 °C. At 1100 °C, very low creep rates of HPSN with 0–30 wt% TiN are observed at nominal stresses up to 160 MPa. At
Yu. G. Gogotsi, G. Grathwohl
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Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
Japanese Journal of Applied Physics, 1991Formation of a titanium nitride (TiN) layer by the nitridation of Ti in high-pressure (5.8 atm) ammonium (NH3) ambient is studied. A thick TiN layer is formed in high-pressure nitridation. Solid-phase silicidation reaction occurs at Ti/Si during the nitridation.
Shih-Chang Chen +6 more
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