Results 191 to 200 of about 1,889,593 (284)

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

open access: yesAdvanced Science, EarlyView.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen   +6 more
wiley   +1 more source

Synergistic Pyro‐Phototronics and Structural Anisotropy in CsAg2I3/GaN Heterostructures for High‐Performance Polarization‐Sensitive UV Photodetectors

open access: yesAdvanced Science, EarlyView.
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai   +9 more
wiley   +1 more source

Investigating Phase Separation in Genome Folding via Multiscale Computational Modeling

open access: yesAdvanced Science, EarlyView.
Phase separation is emerging as a multiscale organizing principle of genome folding across scales, from nucleosomes and transcriptional condensates to chromatin domains and nuclear compartments. By integrating physics‐based simulations with data‐driven inference, computational modeling now links molecular interactions to nuclear architecture and points
Jiahu Tang   +3 more
wiley   +1 more source

Functional landscape of mechanistic diversity in 27 claudin family members at tight junctions. [PDF]

open access: yesSci Adv
Kashihara H   +16 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

Non‐Uniform Space‐Time‐Coding Modulation for Low‐Complexity Diagnostics of Reconfigurable Intelligent Surfaces

open access: yesAdvanced Electronic Materials, EarlyView.
A diagnostic method for reconfigurable intelligent surfaces (RIS) based on non‐uniform space‐time‐coding modulation is presented. Fault localization is achieved via amplitude‐only spectral measurements, eliminating the need for complex signal processing. A one‐to‐one mapping between harmonic components and RIS elements enables accurate detection.
Xiao Qing Chen   +8 more
wiley   +1 more source

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