Results 131 to 140 of about 10,610 (248)

On the Transconductance of Polysilicon Thin Film Transistors

open access: yesЖурнал нано- та електронної фізики, 2011
In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the grain boundary trap states.
Panwar, Alka, Tyagi, B.P.
openaire   +2 more sources

Printable Conductive Hydrogels for Electrochemical Biosensing and Soft Bioelectronic Interfaces

open access: yesAdvanced Science, Volume 13, Issue 39, 13 July 2026.
Flexible, conductive hydrogels that integrate printability, mechanical tunability, biocompatibility, and electronic performance remain challenging to achieve. Here, we develop 3D‐printable poly(ethylene glycol)–poly(pyrrole)‐ hydrogels with tissue‐like mechanics, high cytocompatibility, and robust electrochemical function.
Lukas Hein   +6 more
wiley   +1 more source

Linearity Improvement Technique for the Common-Source [PDF]

open access: yes, 2008
A linearity improvement technique for a common-source transconductance stage is proposed. The proposed technique requires an additional MIM capacitor located in parallel with the intrinsic gate-source capacitor of a transistor.
Transconductance Stage   +2 more
core  

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, Volume 13, Issue 40, 17 July 2026.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

open access: yesAdvanced Science, Volume 13, Issue 40, 17 July 2026.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa   +10 more
wiley   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

open access: yesAdvanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira   +8 more
wiley   +1 more source

A novel design of current differencing transconductance amplifier with high transconductance gain and enhanced bandwidth

open access: yesTURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES, 2021
Shireesh Kumar Rai   +3 more
openaire   +1 more source

Wood‐Based Bioelectronics: Lignosulfonate‐Based Conductive Biocomposites for Paper Organic Electrochemical Transistors

open access: yesAdvanced Electronic Materials, Volume 12, Issue 14, 20 July 2026.
Biodegradable wood‐based bioelectronics are realized by integrating poly (2,3‐ethylenedioxythiopene:lignosulfonate (PEDOT:LigS) as a mixed ionicelectronic channel in organic electrochemical transistors fabricated on paper substrates. The biocomposite exhibits high conductivity, biocompatibility, and strong transistor performance, while devices built on
Katharina Matura   +8 more
wiley   +1 more source

High‐Performance and Environmentally Stable Organic Electrochemical Transistors Enabled by a Reprocessed Self‐Doped PEDOT Channel

open access: yesAdvanced Electronic Materials, Volume 12, Issue 14, 20 July 2026.
A simple reprocessing strategy based on freeze‐drying and re‐dissolution is introduced to enhance the electrical performance of self‐doped PEDOT while preserving its intrinsic environmental stability. The reprocessed S‐PEDOT enables organic electrochemical transistors with improved drain current, transconductance, and robust operation under high ...
Ruifeng Xu   +4 more
wiley   +1 more source

Mechanically Durable Intrinsically Stretchable Neuromorphic Devices via Molecular Microstructure Design

open access: yesSmall, Volume 22, Issue 41, 22 July 2026.
This study reports intrinsically stretchable neuromorphic devices that exhibit outstanding mechanical stability while fully preserving their electrical characteristics over 105 repeated deformation cycles under 50% tensile strain. Such robustness is achieved through a rational molecular design strategy that systematically modulates the chain packing of
Kwan‐Nyeong Kim   +12 more
wiley   +1 more source

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