Results 31 to 40 of about 3,951 (223)
Engineering and Applied Science Research, 2020 To improve the transconductance of operational transconductance amplifier (OTA), various architectures namely recycling folded cascode (RFC), Improved recycling folded cascode (IRFC), modified recycling folded cascode (MRFC) and high recycling folded ...
Sudheer Raja Venishetty +1 more
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Modelling of High Frequency Converter Transformer with Floating Active Inductor
Elektronika ir Elektrotechnika, 2018 As number of digital electronics and power electronics based devices has risen recently, the fields of application for high frequency transformers have been increased.
Mustafa Konal +3 more
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Micromachines, 2023 In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang +10 more
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Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications
IEEE Access, 2019 In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi +2 more
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Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor
IEEE Journal of the Electron Devices Society, 2015 An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey +2 more
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Channel length effects on the performance of vOECTs
Materials Research ExpressChannel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen +9 more
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Advanced Functional Materials, EarlyView.Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
A High Gain Operational Amplifier With Dual-Tail Source Architecture for Fast Slewing
IEEE Open Journal of Circuits and SystemsThis work introduces an enhanced operational amplifier architecture in which four flipped voltage follower (FVF) cells act as adaptive tail current sources to improve the performance of a conventional current mirror (CM)-based design.
Meysam Akbari +3 more
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Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis
IEEE Journal of the Electron Devices Society, 2019 This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the ...
Mandar S. Bhoir +6 more
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